4.4 Article Proceedings Paper

Hydrogen gas sensors based on PLD grown NiO thin film structures

期刊

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200778914

关键词

-

向作者/读者索取更多资源

NiO thin films were grown by pulsed laser deposition on (100)Si substrates at 200 degrees C temperature. The effect of the O-2 pressure during the deposition process on the morphological, electrical and sensing properties of the films has been investigated. AFM images showed that the surface morphology of NiO films can be modified by the oxygen pressure during deposition. Electrical measurements showed that the well-known native p-type conductivity exhibits a conversion from p-type to n-type when the O-2 pressure is reduced. Resistance responses of NiO-thin films towards hydrogen (H-2) flow in air ambient have been measured. NiO thin film p-n homojuctions were then fabricated to investigate the electrical properties of such structures. The p-n homojunctions exhibited the distinct rectifying current-voltage (I-V) characteristics. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据