Review
Materials Science, Multidisciplinary
Nishant Saxena, Anbarasu Manivannan
Summary: The article reviews the systematic understanding of threshold switching properties in various chalcogenide materials, Ovonic threshold switching and Ovonic memory switching, and discusses the role of threshold switching in governing programming speed based on research efforts over the last six decades. It also explores the realization of threshold switching in picosecond timescale and proposes a scheme of material classification for phase-change memory programming.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2022)
Article
Nanoscience & Nanotechnology
James T. Best, Mohammad Ayaz Masud, Maarten P. Boer, Gianluca Piazza
Summary: The design, modeling, and experimental validation of a highly scalable phase change electromechanical relay are presented. The relay utilizes phase change material to actuate and change its state. Finite element analysis models were used to predict temperature distributions and quench times, and the experimental results confirmed the accuracy of the models.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Meng Xu, Qundao Xu, Rongchuan Gu, Songyou Wang, Cai-Zhuang Wang, Kai-Ming Ho, Zhongrui Wang, Ming Xu, Xiangshui Miao
Summary: It is discovered that a large fraction of over-coordinated clusters fails to generate mid-gap states, which are probably caused by hypervalent bonding, a multi-centered covalent bond participated by delocalized lone-pair electrons. In practical applications, compatible dopants can be used to change the number of hypervalent bonds, thus controlling the number of mid-gap states and consequently the performance of PCM and OTS materials. These results reveal the origin of mid-gap states in chalcogenide glasses, enabling extensive control in the development of pioneering electrical switching materials.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Ziling Fu, Zhi Wang, Huiying Wang, Rui Jiang, Lanlan Liu, Chongqing Wu, Jian Wang
Summary: The combination of phase-change materials and integrated photonics allows for the development of new all-optical devices. Understanding the fluctuations in refractive index during phase-switching is crucial for optimal device operation. Simulation results show good agreement with calculations, and the crystallization fraction and refractive index change of the PCM cell are investigated. Proper setting of optical pulses is necessary for specific devices.
Article
Engineering, Electrical & Electronic
Marinela Barci, Daniele Leonelli, Xue Zhou, Xiaojie Wang, Daniele Garbin, Ganesh Jayakumar, Thomas Witters, Nathali Franchina Vergel, Shreya Kundu, Senthil Vadakupudhu Palayam, Huifang Jiao, Hao Wu, Gouri Sankar Kar
Summary: In this work, a new type of phase change memory pillar device with higher speed and endurance was fabricated on a 300-mm wafer. The optimized stack showed fast and stable switching performance, with a long retention time at high temperature.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Physical
Pengfei Li, Yulin Zhang, Yunlong Guo, Lang Jiang, Zongbo Zhang, Caihong Xu
Summary: The paper introduces a solution process for a SiOx dielectric layer based on PHPS and investigates its resistance switching behavior in Ag/SiOx/Au memristors, achieving a high-performance memristor in the end.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Thu-Trang Ho, Hwanwook Lee, Yongwoo Kwon
Summary: The variability of nonvolatile memory is crucial as memory capacity expands, particularly due to individual device variability arising from scaling down. In this study, we used simulation to analyze the intrinsic variability in phase change memory switching, focusing on stochastic nucleation for self-heating and heater-based cell architectures. Our fully coupled numerical solution of electrothermal and phase-field models allowed us to simulate the amorphization and crystallization of the active material in reset and set operations, respectively. By seeding nuclei stochastically based on Poisson's probability, we observed sample-by-sample variations in phase distribution and cell resistance. The results showed that the reset resistance is better described by Weibull statistics and that the heater-based cell exhibited less variability, while the self-heating cell consumed less energy during switching.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Lun Wang, Zixuan Liu, Zhuoran Zhang, Jiangxi Chen, Jinyu Wen, Ruizhe Zhao, Hao Tong, Xiangshui Miao
Summary: In this study, a refresh operation is proposed to solve the poor thermal stability issue of OTS selectors based on GeTe. The switching performance of GeTe selectors can be fully restored to the original level by the refresh operation and exhibit good consistency, making them applicable in the BEOL process. Furthermore, the endurance of the device is significantly improved after applying the refresh operation. The effectiveness of this refresh operation is also verified for OTS devices based on the commonly used GeSe system, suggesting its wide applicability to other OTS devices.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Materials Science, Multidisciplinary
Rongchuan Gu, Meng Xu, Yongpeng Liu, Yinghua Shen, Chong Qiao, Cai-Zhuang Wang, Kai-Ming Ho, Songyou Wang, Ming Xu, Xiangshui Miao
Summary: Si doping plays a crucial role in OVTS materials by improving thermal stability and reducing threshold voltage. This study reveals the atomic mechanisms of Si doping in OVTS materials through first-principles calculations, providing a theoretical basis for the application of Si doping in OVTS materials.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Multidisciplinary Sciences
Asir Intisar Khan, Alwin Daus, Raisul Islam, Kathryn M. Neilson, Hye Ryoung Lee, H-S Philip Wong, Eric Pop
Summary: This study demonstrates a reduced switching current density and multi-level operation in flexible superlattice PCM, with excellent performance even after repeated bending and cycling, paving the way for low-power memory in flexible electronics. It also provides key insights for PCM optimization on conventional silicon substrates.
Article
Materials Science, Multidisciplinary
Changping Zhang, Maoliang Wei, Jun Zheng, Shujun Liu, Hongyuan Cao, Yishu Huang, Ying Tan, Ming Zhang, Yiwei Xie, Zejie Yu, Junying Li, Hui Ye, Lan Li, Hongtao Lin, Huan Li, Yaocheng Shi, Liu Liu, Daoxin Dai
Summary: This study demonstrates nonvolatile multilevel switching of silicon photonic devices with Ge2Sb2Te5 (GST) using In2O3 transparent microheaters. By electro-thermally induced phase transitions, repeatable and reversible multilevel modulation of GST is achieved. The precise multilevel phase-change modulation is crucial for the development of nonvolatile reconfigurable switches and variable attenuation devices in large-scale programmable optoelectronic systems.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Computer Science, Information Systems
Yuliang He, Duo Lu, Kaisong Huang, Tianzheng Wang
Summary: This paper analyzes and evaluates state-of-the-art persistent memory range indexes built for real persistent memory. The findings show that newer designs may not necessarily outperform previous proposals. However, persistent memory indexes are competitive with DRAM indexes, highlighting the potential of a unified design. Improvement is needed in terms of functionality.
PROCEEDINGS OF THE VLDB ENDOWMENT
(2022)
Article
Chemistry, Multidisciplinary
Anze Mraz, Rok Venturini, Damjan Svetin, Vitomir Sever, Ian Aleksander Mihailovic, Igor Vaskivskyi, Bojan Ambrozic, Goran Drazic, Maria D'Antuono, Daniela Stornaiuolo, Francesco Tafuri, Dimitrios Kazazis, Jan Ravnik, Yasin Ekinci, Dragan Mihailovic
Summary: Current trends in data processing have led to a search for new concepts of memory devices that prioritize efficiency, speed, and scalability. A promising new approach based on resistance switching in 1T-TaS2 has been investigated. The research explores the energy efficiency scaling of charge configuration memory (CCM) devices in relation to device size, data write time (tau(W)), and other parameters. The study finds that energy efficiency scales linearly with device size and data write time, only deviating from linearity when tau(W) approaches the intrinsic switching limit. CCM devices are shown to be faster and more energy efficient compared to current memory devices, utilizing 2.2 fJ, 16 ps electrical pulses for two-terminal switching.
Article
Engineering, Electrical & Electronic
Neeru Bala, Anup Thakur
Summary: In this study, doped Ge2Sb2Te5 alloys and thin films were prepared and their properties were investigated. The doped films retained amorphous structure and exhibited uniform and smooth morphology. Transmission spectra showed high transparency of the doped films in the near-infrared region. The doped GST thin films had a lower optical band gap compared to pure GST thin films.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Chemistry, Physical
Alessio Antolini, Eleonora Franchi Scarselli, Antonio Gnudi, Marcella Carissimi, Marco Pasotti, Paolo Romele, Roberto Canegallo
Summary: This paper conducted a comprehensive characterization of phase-change memory (PCM) cells and proposed strategies and algorithms to optimize their performance for analog in-memory computing applications. The results showed that multi-level cell conductance programming can effectively reduce the impact of undesired phenomena, making it suitable for analog in-memory computing applications.
Article
Engineering, Electrical & Electronic
Sergey A. Kostylev
IEEE ELECTRON DEVICE LETTERS
(2009)
Proceedings Paper
Engineering, Electrical & Electronic
S. A. Kostylev, S. A. Yatsunenko, A. G. Yatsunenko
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
(2012)
Article
Materials Science, Multidisciplinary
S. Kostylev
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
(2009)
Article
Engineering, Electrical & Electronic
Ilya V. Karpov, Sergey A. Kostylev
IEEE ELECTRON DEVICE LETTERS
(2006)
Article
Engineering, Electrical & Electronic
A Pirovano, AL Lacaita, F Pellizzer, SA Kostylev, A Benvenuti, R Bez
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2004)
Article
Materials Science, Multidisciplinary
E Morales-Sánchez, E Prokhorov, J González-Hernández, Y Vorobiev, JH Rangel, S Kostylev
Article
Nanoscience & Nanotechnology
Spyridon G. Kosionis, Emmanuel Paspalakis
Summary: In this study, we theoretically investigate the pump-probe response and the four-wave mixing spectrum in a hybrid system composed of a semiconductor quantum dot and a spherical metal nanoparticle. Using a density matrix methodology, we calculate the absorption/gain, dispersion, and four-wave mixing spectra, and analyze their spectral characteristics. We also apply the metastate theory and the dressed-state picture to predict the positions of the spectral resonances.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
L. S. Lima
Summary: This study investigates quantum correlation and entanglement in the non-Hermitian Hubbard model. By analyzing quantum entanglement measures such as entanglement negativity and entropy, the effect of non-Hermitian imaginary hopping on the system is explored. It is found that in the large... limit, the non-Hermiticity reverses the behavior of the ground state energy and low-lying excitations.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Nam-Chol Ri, Chung-Sim Kim, Sang-Ryol Ri, Su-Il Ri
Summary: By decreasing the lattice thermal conductivity of GNR through chemical derivation and strain, enhancing the thermoelectric properties of the electron part can be an important method to approach PGEC. This paper proposes synthesized hybrid systems formed by chemical derivation in the middle parts of b-AGNRs, and investigates the band structures and thermoelectric properties of the electron part under different strains. The results show that the band gaps of the systems significantly increase under different strains.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Le T. T. Phuong, Tran Cong Phong
Summary: This study investigates the effects of gas molecules adsorbed on /312-borophene on its electronic heat capacity and thermal Schottky anomaly. The results show that the adsorbed gas molecules have different impacts on the electronic heat capacity, leading to the generation of various new energy levels.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Tianyan Jiang, Jie Fang, Wentao Zhang, Maoqiang Bi, Xi Chen, Junsheng Chen
Summary: This paper investigates the adsorption and sensing properties of transition metal-doped WSSe gas-sensitive devices towards H2, CO, and CO2 gases related to thermal runaway in Li-ion batteries using density functional theory. The results show that Ti, Mn, and Mo dopants preferentially bind to the S-surface of the WSSe monolayer, and all three monolayers exhibit significantly improved sensing characteristics, with chemisorption towards CO. Band structure analysis suggests that the Ti-WSSe monolayer has the potential to be used as a resistive CO detection sensor. Recovery time calculations indicate the reuse capabilities of the gas-sensitive devices. Mn-WSSe monolayer shows potential for H2 detection, while Mo-WSSe monolayer is more suitable for CO2 detection. This work lays the foundation for potential gas-sensitive applications of WSSe monolayer in thermal runaway scenarios, advancing research in gas sensing domains.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Olga A. Alekseeva, Aleksandr A. Naberezhnov, Ekaterina Yu. Koroleva, Aleksandr Fokin
Summary: This study investigates the temperature dependence of crystal structure and dielectric response in a nanocomposite material containing porous glasses and embedded sodium nitrate. The results reveal a crossover point in the temperature dependence of the order parameter of the structural transition in sodium nitrate nanoparticles, as well as a decrease in activation energy of sodium ions hopping conductivity during heating.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Lijun Cheng, Fang Cheng
Summary: This paper investigates the effects of electric and magnetic fields on the Goos-Hanchen (GH) shift in a semi-Dirac system. The results show that the magnitude and direction of the GH shift depend on various factors such as incidence angle, electric barrier height and width, and magnetic field. It is observed that there is a saltus step in GH shifts at the critical magnetic field, which decreases with increased potential barrier thickness. Additionally, the GH shift can be significantly enhanced by applying an electric field in the III region. These findings are important for the development of semi-Dirac based electronic devices.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Alexander K. Fedotov, Uladzislaw E. Gumiennik, Julia A. Fedotova, Janusz Przewoznik, Czeslaw Kapusta
Summary: The study conducted an improved analysis of carrier transport in single-layer graphene and hybrid structures, showing the coexistence of negative and positive contributions in magnetoresistive effect. Various models were used to analyze the dependences on temperature and magnetic field, providing insights into the behavior of electrical resistance in the structures.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Xuhui Peng, Tao Chen, Ruotong Chen, Shizheng Chen, Qing Zhao, Xiaoping Huang
Summary: In this study, a novel method was proposed to design and fabricate optoelectronic devices with highly precise controlled photorefractive liquid crystal structures. By utilizing quantum dots and electric tuning, a regular periodic grating was formed in a quantum dot-doped liquid crystal volume illuminated by a laser standing evanescent wave field. The obtained optical diffraction pattern showed equally spaced light spots and high diffraction efficiency, indicating a significant change in the refractive index of the nanostructured device.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Kai-Hua Yang, Xiao-Hui Liang, Huai-Yu Wang, Yi-Fan Wu, Qian-Qian Yang
Summary: In this work, a theoretical model is proposed to achieve the controllability of quantum interference and decoherence. The effects of intralead Coulomb interaction, interdot tunneling, and electron-phonon interactions on differential conductance are investigated. The results show the appearance of destructive interference, Fano interference, and negative differential conductance in strong dot-lead tunneling regions, while a characteristic pattern of positive and negative differential conductances appears in the weak dot-lead tunneling regime.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Xueying Wang, Qian Ma, Qi Zhang, Yi Wang, Lingyu Li, Dongheng Zhao, Zhiqiang Liu
Summary: Porous double-channel alpha-Fe2O3/SnO2 heterostructures with tunable surface/interface transport mechanism were successfully fabricated by electrospinning and calcination. These heterostructures exhibited a large specific surface area, providing more active sites and enhanced adsorption capacity. The optimal composite materials showed the highest response value and the fastest response/recovery times to DMF, along with good cycling performance, long-term stability, and high gas selectivity.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Donglin Guo, Zhengmeng Xu, Chunhong Li, Kejian Li, Bin Shao, Xianfu Luo, Jianchun Sun, Yilong Ma
Summary: Using full electron-phonon interactions and the Boltzmann transport equation, this study investigates the phonon scattering channel and electrical properties of graphene under anharmonic phonon renormalization (APRN). The results show that the APRN reduces the phonon frequency and three-phonon phase space with increasing temperature, affecting the acoustic branch more than the optical branch. The thermal conductivity of graphene decreases after considering three- and four-phonon scattering, and the primary scattering channels are identified. Furthermore, the APRN increases the strength of electron-phonon coupling and leads to an increase in n-type electric resistance at room temperature.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Hongping Zhao, Man Zhao, Dayong Jiang
Summary: The study proposes a broadband photodetector with high response, high sensitivity, and controllable band by integrating quantum dots and highly conductive materials. The PD composed of ZnO film/PbS quantum dots heterostructure shows excellent photoresponse performance in the UV-Vis-NIR range, with the peak responsivity increased by 550%, accompanied by significant red shift, faster response, and recovery speed. By using RF magnetron sputtering to prepare ultra-thin ZnO film, the impact of PbS quantum dots on the photoelectric properties of ZnO film is comprehensively and systematically discussed.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Ye Xuan Meng, Liwei Jiang, Yisong Zheng
Summary: Manipulating magnetism by electrical means is an effective method for realizing ultra-low power spintronic-integrated circuits. In this study, it is demonstrated that the two-dimensional semiconductor material InO monolayer can be tuned to a half-metallic state by applying a gate voltage, providing theoretical guidance for adjusting two-dimensional magnetic semiconductors.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
Article
Nanoscience & Nanotechnology
Anusha Kachu, Aalu Boda
Summary: In this research, we investigated the impact of confinement nature on a neutral hydrogenic donor impurity in a quantum dot. The study demonstrated intriguing behavior in response to changes in potential shape, quantum dot parameters, and spin-orbit coupling strengths. The findings provide valuable insights into the fundamental physics of quantum dots and impurities and can aid in the design and optimization of QD-based technologies.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2024)
