4.4 Article

High purity specimens of URu2Si2 produced by a molten metal flux technique

期刊

PHILOSOPHICAL MAGAZINE
卷 94, 期 32-33, 页码 3663-3671

出版社

TAYLOR & FRANCIS LTD
DOI: 10.1080/14786435.2014.895876

关键词

crystal growth; strongly correlated electrons; superconducting materials

资金

  1. US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering
  2. US DOE, OBES, Division of Material Science and Engineering

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We report a molten metal flux technique to produce high purity specimens of URu [GRAPHICS] Si [GRAPHICS] . Magnetic susceptibility ( [GRAPHICS] [GRAPHICS] [GRAPHICS] ), heat capacity ( [GRAPHICS] ) and electrical resistivity ( [GRAPHICS] ) measurements show that the bulk properties of these crystals are similar to those that are produced by the Czochralski technique followed by solid-state electro-transport. In particular, we find residual resistivity ratios RRR [GRAPHICS] [GRAPHICS] / [GRAPHICS] as large as 220.

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