Article
Physics, Applied
Katharine Hunter, Himashi P. Andaraarachchi, Uwe R. Kortshagen
Summary: The addition of an inorganic silicon nitride (SiNx) shell on silicon QDs can significantly enhance the quantum yield and carrier lifetime, improving the optical properties of the core-shell nanocrystals.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Alix Valdenaire, Alaa Eldin Giba, Mathieu Stoffel, Xavier Devaux, Loic Foussat, Jean -Marie Poumirol, Caroline Bonafos, Sonia Guehairia, Remi Demoulin, Etienne Talbot, Michel Vergnat, Herve Rinnert
Summary: In this work, the plasmonic properties of highly doped Si nanocrystals embedded in a silica matrix were investigated. P atoms were mainly located in the core of Si nanocrystals with concentrations reaching up to 10 atom %. Alloying and formation of SiP nanoparticles were observed for P contents exceeding 4 atom % in the multilayer. The infrared absorption measurements showed a localized surface plasmon resonance located in the 3-6 μm range. The simulation results revealed a dopant activation rate of about 8% with a mobility of 27 cm2 V-1 s-1 and a free charge carrier density of 2.3 x 1020 cm-3.
ACS APPLIED NANO MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Fatme Trad, Alaa E. Giba, Xavier Devaux, Mathieu Stoffel, Denis Zhigunov, Alexandre Bouche, Sebastien Geiskopf, Remi Demoulin, Philippe Pareige, Etienne Talbot, Michel Vergnat, Herve Rinnert
Summary: This study investigates the influence of phosphorous atoms on the phase separation and optical properties of silicon nanocrystals. It is found that phosphorus incorporation modifies the growth mechanism of Si-NCs, promoting phase separation and leading to nanocrystal formation at lower annealing temperatures. The presence of phosphorus also affects the size and emission wavelength of Si-NCs, and low phosphorus content can significantly improve photoluminescence intensity.
Article
Materials Science, Ceramics
Cheng Wang, Jiawen Zhou, Ming Song, Zhongshan Lu, Xianhui Chen, Yan Zheng, Weidong Xia
Summary: A novel process based on atmospheric nonthermal arc plasma was proposed for the continuous synthesis of ultrafine SiC nanoparticles with small size (5-9 nm) and narrow size distribution. The addition of hydrogen in plasma gas can tune the product characteristics and induce a blueshift in the photoluminescence peak of the beta-SiC nanoparticles. The as-prepared nanoparticles had a high band gap and showed a quantum confinement effect due to their ultrafine size.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2021)
Article
Engineering, Chemical
Golam Ismot Ara Taposhe, Leili Tafaghodi Khajavi
Summary: A hybrid process was employed to remove boron and phosphorus from silicon using slag and solvent refining. Quaternary slag of CaO-Al2O3-SiO2-Na2O was used at 1300°C with a slag-to-metal ratio of one. The mass transfer coefficient of B and P in the slag and alloy phases was calculated, and the rate-limiting steps were determined to be mass transport in the liquid slag for B and mass transport in the alloy phase for P.
Article
Chemistry, Physical
Zhe-Yi Ren, Ji -Hong Zhao, Chao Li, Zhan-Guo Chen, Qi-Dai Chen
Summary: Hyperdoping technique introduces transition metals into silicon to enable silicon to operate in infrared wavebands, improving its infrared detection performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Review
Chemistry, Physical
Chao Li, Ji-Hong Zhao, Zhan-Guo Chen
Summary: This review focuses on the infrared absorption and detection mechanism of hyper-doped silicon achieved by ion implantation and pulsed laser annealing. It emphasizes the impact of chalcogens and transition metals on the infrared absorption properties of hyper-doped silicon. The latest research on the responsivity and external quantum efficiency of photodetectors based on hyper-doped silicon is reviewed, along with suggestions for improving infrared absorption and device performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Electrical & Electronic
Chao Li, Ji-Hong Zhao, Yang Yang, Qi-Dai Chen, Zhan-Guo Chen, Hong-Bo Sun
Summary: This paper reports a chromium-hyperdoped black Si material fabricated using femtosecond laser pulses, with high concentration of Cr atoms and sub-bandgap absorptance, resulting in excellent responsivity and millisecond-level response time of the fabricated photodiodes.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Physical
R. Turansky, J. Brndiar, A. Pershin, A. Gali, H. Sugimoto, M. Fujii, I Stich
Summary: This study uses computational techniques to investigate the atomic structures, electronic, and vibrational properties of heavily B and P codoped Si quantum dots. It is found that the smallest dots are fully amorphous, while larger ones have a quasi-crystalline core. The study provides insights into dopant distribution in the dot and shows that the core morphology depends strongly on the chemical composition of the dot.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Materials Science, Multidisciplinary
Xiaorong Jin, Qiang Wu, Song Huang, Gongrong Deng, Jianghong Yao, Hui Huang, Peng Zhao, Jingjun Xu
Summary: The study found that the sulfur-hyperdoped silicon photodetector fabricated with femtosecond laser exhibits high sensitivity and wide-band detection performance from 10 to 300 K, attributed to the high carrier activity and ultrafast interactions between hyperdoped carriers and silicon. The device shows promising applications in multifunctional optoelectronic devices.
Article
Materials Science, Multidisciplinary
Le Thanh Cong, Nguyen Thi Ngoc Lam, Doan Van Thuong, Ngo Ngoc Ha, Nguyen Duc Dung, Dang Viet Anh Dung, Ho Truong Giang, Xuan Thang Vu
Summary: Silicon nanowires were prepared using the MACE method from silicon wafers of different doping types and resistivity, revealing the coexistence of Si nanocrystals and SiNWs in both types of semiconductors. From heavily boron-doped p-type samples, intense red light emission was observed. HR-TEM images showed numerous Si nanocrystals on the porous surface of the SiNWs walls, which were proposed to be responsible for the material's optical properties. The microscopic links between photoluminescence behavior, dopants, and the formation of Si nanocrystals were presented and discussed.
Article
Chemistry, Physical
F. Komarov, I. Parkhomenko, A. Alzhanova, T. Wang, K. Zhussupbekov, A. Zhussupbekova, I. Shvets, E. Wendler, S. Berman, O. Milchanin
Summary: In this study, silicon layers hyperdoped with selenium were formed through Se implantation followed by pulsed laser annealing. The distribution of Se atoms and the formation of intermediate sub-band within the Si band gap were investigated. The experimental and theoretical sub-band properties were compared, and a significant increase in light absorption across a wide spectral region was observed, demonstrating the potential of selenium hyperdoping for enhancing infrared absorption in silicon.
APPLIED SURFACE SCIENCE
(2023)
Review
Energy & Fuels
AnYao Liu, Sieu Pheng Phang, Daniel Macdonald
Summary: This article focuses on the importance of gettering techniques in silicon-based PV devices to improve efficiency, discussing various capture approaches and their impacts on device performance.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2022)
Article
Nanoscience & Nanotechnology
N. Kuganathan, H. Bracht, K. Davazoglou, F. Kipke, A. Chroneos
Summary: The study focuses on the influence of gallium-doped Ge on defect structures and charge transfer, finding that gallium facilitates the formation of nearest neighbor Ge vacancies and that the formation of oxygen vacancies is endoergic with a charge of -2.
Article
Chemistry, Physical
Alina A. Maksimova, Alexander Uvarov, Artem Baranov, Alexander S. Gudovskikh, Dmitri A. Kudryashov, Ekaterina A. Vyacheslavova, Ivan A. Morozov, Sylvain Le Gall, Jean-Paul Kleider
Summary: Boron phosphide layers were synthesized using different methods and their electrical contact properties with silicon were investigated. Electron accumulation at the BP/Si interface was observed, which can be attributed to low doping concentration or undoped BP and Fermi level pinning at the BP/Si interface due to the presence of interface defect states. Additionally, inserting a thin i-a-Si:H layer between BP and Si improved the minority carrier lifetime and open-circuit voltage in photovoltaic applications.
ACS APPLIED ENERGY MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Jichen Dong, Degong Ding, Chuanhong Jin, Yunqi Liu, Feng Ding
Summary: We present a systematic theoretical study on the CVD growth mechanism of MoS2 and propose a transition of growth from Mo-II edges to S-III edges and Mo-III edges by tuning the growth condition from Mo-rich to S-rich. This study provides a general guideline on theoretical studies of 2D crystals' growth mechanisms and deepens our understanding on the growth mechanism of multielement 2D crystals.
Article
Engineering, Electrical & Electronic
Jie Hu, Houwei Pang, Yuan Wang, Deren Yang, Dongsheng Li
Summary: A long-term reliable Erbium doped light emitting device based on npn heterojunction structure has been developed. The device demonstrates a linear relation between the electroluminescence intensity of Er3+ ions and the operating currents. The device with a 3V onset voltage can operate for over 1200 hours due to the separation and acceleration of electrons that excite Er3+ ions. This npn heterojunction device structure can also be applied to other rare earths like Tm, Eu, etc., which opens up possibilities for electroluminescence of rare earths and integrated silicon photonics.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Liang Ji, Sai Luo, Lei Li, Ningkang Qian, Xiao Li, Junjie Li, Jingbo Huang, Xingqiao Wu, Hui Zhang, Deren Yang
Summary: Developing high-performance electrocatalysts for hydrogen evolution reaction in alkaline media is challenging but desirable for water splitting. A wet chemistry method was used to synthesize RuCu nanoflowers with tunable atomic ratios. The Ru3Cu NFs exhibited excellent catalytic properties, requiring only 55 mV for a current density of 10 mA cm(-2) and showing minimal decay after 2000 cycles. The flower-like structure and introduction of Cu improved the HER performance by providing more active sites and modulating the electronic structure of Ru.
NANOSCALE ADVANCES
(2023)
Article
Nanoscience & Nanotechnology
Yanxia Lin, Yu Cao, Haozhe Lu, Chenchen Liu, Zirui Zhang, Chuanhong Jin, Lian-Mao Peng, Zhiyong Zhang
Summary: In this study, a process is developed to clean residual polymers and release stress by wet etching the Si/SiO2 substrate surface underneath the aligned semiconducting carbon nanotube (ACNT) film. Top-gated ACNT field-effect transistors (FETs) fabricated with this process exhibit significant improvement in terms of saturation on-current, peak transconductance, hysteresis, and subthreshold swing. These improvements are attributed to the increase in carrier mobility after the substrate surface refreshing process.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Xiaoshuang Liu, Yazhe Wang, Xi Zhang, Yunhao Lu, Rong Wang, Deren Yang, Xiaodong Pi
Summary: We investigated the crack-healing mechanism of 4H silicon carbide (4H-SiC) and found that high-temperature thermal annealing in the air atmosphere effectively heals indentation-induced cracks in undoped 4H-SiC by the formation and viscous flow of SiO2. Nitrogen doping assists the atomic diffusion and crack healing of 4H-SiC, while vanadium doping hinders the healing process. The padding of glassy SiO2 is found to effectively recover the bending strength of indented 4H-SiC samples.
JOURNAL OF APPLIED PHYSICS
(2023)
Review
Physics, Applied
Xiaozhong Chen, Hyun-Ha Kim, Tomohiro Nozaki
Summary: The plasma catalytic valorization of gases, particularly CH4 and CO2, has gained increasing attention. Efficient plasma-catalyst interaction is of key importance, but plasma catalysis is still poorly studied. This work discusses the challenging and important plasma-catalyst interaction, comparing different types of plasma and catalyst beds, with a focus on the fluidized-bed dielectric barrier discharge (FB-DBD) reactor. Ongoing research on FB plasma catalysis is reviewed and the superiority of FB-DBD to other candidates is critically evaluated.
PLASMA PROCESSES AND POLYMERS
(2023)
Article
Chemistry, Multidisciplinary
Ayman A. Abdelaziz, Yoshiyuki Teramoto, Tomohiro Nozaki, Hyun-Ha Kim
Summary: Interest in sustainable nitrogen fertilizer production using plasma technology is growing rapidly. This study focuses on improving the efficiency of this process through comprehensive experiments using spark discharge. The results reveal that applying a bipolar voltage at high frequencies greatly enhances the yield and efficiency, and increasing the electrode gap effectively enhances the energy usage. The use of a floating electrode in the large gap further improves the NOx production at a lower energy cost.
ACS SUSTAINABLE CHEMISTRY & ENGINEERING
(2023)
Article
Materials Science, Multidisciplinary
Zhoubin Yu, Yawei Dai, Hannu-Pekka Komsa, Xibiao Ren, Mengfei Yuan, Maohai Xie, Chuanhong Jin
Summary: Mirror twin grain boundary (MTB) defects, a special type of high-symmetry one-dimensional (1D) defects in two-dimensional atomically thin transition metal dichalcogenides (TMDCs), have been studied in monolayer WSe2-MoSe2 lateral heterojunctions using atomic-resolution annular dark-field scanning transmission electron microscopy (ADF-STEM). MTBs were found to have a higher density in MoSe2 than in WSe2 domains, with some spanning across the domain interface. The composition of MTBs located in WSe2 domains was observed to be Mo-dominant, indicating the preferential substitution of Mo to W during the later growth period of MoSe2.
Article
Chemistry, Physical
Boxiang Zhang, Zhiyong Zhang, Chuanhong Jin
Summary: Polymer-sorted high-density carbon nanotube (CNT) arrays have the potential to extend the silicon-based Moore's law. Imaging these arrays using LVSEM on insulating substrates is necessary but challenging due to the nanoscale features and complex contrast. Two methods were developed to separate the contrasts and the imaging mechanism was investigated. The proposed contrast separation method can be a useful tool for further study and application of CNT arrays.
Article
Engineering, Electrical & Electronic
Lei Yang, Yuxuan Fan, Xiang Lv, Houwei Pang, Shuai Yuan, Xuegong Yu, Dongsheng Li, Deren Yang
Summary: This work investigates the influence of erbium (Er) doping on the SiNxOy/c-Si interface, and found that activated Er3+ ions can result in a higher positive charge density, leading to band bending and deeper depletion regions. Through deep-level transient spectroscopy (DLTS), a higher density of interface states and wider energy distribution were observed in the Er-doped samples. Energy dispersive X-ray spectroscopy (EDX) analysis further supports the interaction between Er impurities and intrinsic defects at the interface.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Yanxia Lin, Yu Cao, Sujuan Ding, Panpan Zhang, Lin Xu, Chenchen Liu, Qianlan Hu, Chuanhong Jin, Lian-Mao Peng, Zhiyong Zhang
Summary: Aligned semiconducting carbon nanotubes have the potential to be an alternative to silicon in scaled field-effect transistors (FETs) due to their easy miniaturization and high energy efficiency. Researchers have successfully fabricated aligned carbon nanotube FETs at the same dimensions as low-node silicon technology, demonstrating size and electronic performance superior to silicon transistors. By introducing a full-contact structure, nanotube FETs with scaled contacted gate pitch comparable to the 10 nm silicon technology node have been created, exhibiting higher carrier mobility and Fermi velocity.
NATURE ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Hongshan Xiao, Yifan Liu, Sujuan Ding, Yunfei Gao, Minglong Zhai, Xuelei Liang, Chuanhong Jin, Honggang Liu, Zhiyong Zhang
Summary: Measurement and optimization of interface states in metal oxide semiconductors are necessary for high-performance and high-reliability FETs. However, research on interface states of CNT film FETs is lacking. In this study, MOS capacitors were fabricated on a CNT network film with a Y2O3 gate dielectric to investigate electrically active traps near the interface. The results showed that postdeposition annealing processes could effectively lower the interface trap density and improve the performance of CNT film FETs.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Multidisciplinary Sciences
Shengxuan Wang, Hao Cui, Sijia Jin, Xiaodong Pi, Haiyan He, Chunhui Shou, Deren Yang, Lei Wang
Summary: A new anti-reflection strategy is proposed in this study, using soft nanoimprint lithography to prepare textured structures on the outside of SiNx films. Experimental results show that these textured structures have wide spectrum anti-reflection performance.
Article
Chemistry, Multidisciplinary
Sheng'ou Lu, Hongyu Chen, Wei Hang, Rong Wang, Julong Yuan, Xiaodong Pi, Deren Yang, Xuefeng Han
Summary: The effect of nitrogen doping on dislocation proliferation in SiC crystals was investigated. The thermal field and thermal stress during PVT growth were calculated, and the dislocation density was calculated based on the Alexander-Haasen model. By comparing the calculation and experimental results, a possible value of effective stress was proposed to evaluate the effect of nitrogen doping on dislocation density in n-type SiC.
Article
Chemistry, Multidisciplinary
Ningkang Qian, Degong Ding, Liang Ji, Junjie Li, Hui Zhang, Deren Yang
Summary: In this study, three types of core-shell nanocrystals, Au73Pd27@Pt, Au66Pd34@Pt, and Pd@Pt, were successfully constructed using lattice engineering. The strain effect and ligand effect caused by Au were found to enhance the activity of Pt in the electrocatalytic CO2 reduction reaction (EOR). In situ FTIR studies confirmed that the EOR processes on these nanocrystals were dominated by the C2 pathway, which explained the enhancement of EOR activity by the faster kinetics of the C2 pathway producing acetate or acetaldehyde.
