Article
Nanoscience & Nanotechnology
Yachen Xu, Huimin Chen, Haiyang Xu, Minyu Chen, Pengchao Zhou, Shuzhe Li, Ge Zhang, Wei Shi, Xuyong Yang, Xingwei Ding, Bin Wei
Summary: In this study, a composite structure composed of Al2O3/HfO2 with different Al2O3/HfO2 cycles prepared by atomic layer deposition (ALD) was designed to obtain high-quality ultrathin (1-12 nm) dielectric films. The film exhibited a layer growth mode and physically formed at 3 nm, with the electrically stable film thickness being 10 nm. The ALD-prepared composite strategy provides a simple and practical way to obtain high-quality dielectric films.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Ceramics
Seo-Hyun Moon, Soo-Hyun Bae, Young -Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi, Sung-Min Yoon
Summary: Bi-layered channel structures were introduced to enhance the carrier mobility of oxide thin film transistors. The use of IZO/IGZO bi-layered channel resulted in the highest carrier mobility when the film thickness and ALD sub-cyclic ratio were optimized. The optimum cationic compositions of the IZO and IGZO layers were also determined.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Physical
Zexin Tu, Kun Wang, Liwei Ji, Jiaxian Wan, Qiren Luo, Hao Wu, Chang Liu
Summary: We demonstrate the preparation of wafer-scale SnSe ambipolar thin film transistor (TFT) arrays by preparing a-axis-oriented SnSe thin films through atomic layer deposition and using lithography and copper-assisted exfoliation techniques. The devices show improved on/off current ratios and increased hole and electron mobilities through annealing at 500°C to improve the crystalline quality of SnSe. As the SnSe channel thickness increases to 50 nm, the devices exhibit a transition from symmetric ambipolar to hole-dominated behaviors. The copper-assisted exfoliation method provides an etching technique for making patterned 2D devices.
APPLIED SURFACE SCIENCE
(2023)
Review
Engineering, Manufacturing
Hye-Mi Kim, Dong-Gyu Kim, Yoon-Seo Kim, Minseok Kim, Jin-Seong Park
Summary: This article provides an overview of the history and importance of ALD-based oxide semiconductors, discusses the advantages of ALD in oxide semiconductor deposition, and explains the challenges of scaling oxide semiconductors and ALD for industrial applications.
INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING
(2023)
Article
Chemistry, Multidisciplinary
Jingwei Shi, Stacey F. Bent
Summary: Ionic liquid assisted MLD (IL-MLD) is an improved technique that expands the range of chemical reactions and overcomes limitations of traditional MLD by using ionic liquids. IL-MLD enables the synthesis of polymers and may be applied to other vapor deposition techniques.
Article
Chemistry, Multidisciplinary
M. Isabelle Buschges, Rudolf C. Hoffmann, Anna Regoutz, Christoph Schlueter, Jorg J. Schneider
Summary: The multilayered heterostructures of In2O3, SnO2, and Al2O3 showed improved properties in thin-film transistors (TFT), with high transparency and enhanced semiconducting behavior achieved through atomic layer deposition. Incorporation of only two monolayers of Al2O3 effectively suppressed oxygen vacancies, leading to improved TFT characteristics.
CHEMISTRY-A EUROPEAN JOURNAL
(2021)
Article
Nanoscience & Nanotechnology
Janne-Petteri Niemela, Anish Philip, Nadia Rohbeck, Maarit Karppinen, Johann Michler, Ivo Utke
Summary: The state-of-the-art atomic layer deposition (ALD) and molecular layer deposition (MLD) technology has enabled the fabrication of nanoscale inorganic-organic superlattices, showing great potential in enhancing the mechanical flexibility of rigid inorganic materials. By introducing nanoscale Fe-terephthalate interlayers into epsilon-Fe2O3 thin films, the elastic modulus can be significantly reduced while maintaining high-coercive-field magnetic characteristics. The results are particularly significant for magnetic recording applications in next-generation flexible electronics.
ACS APPLIED NANO MATERIALS
(2021)
Article
Chemistry, Physical
Jina Kim, Myeong Gil Chae, Young Joon Han, Jun Choi, Kwan Hyun Cho, Heenang Choi, Bo Keun Park, Taek-Mo Chung, Woongkyu Lee, Jeong Hwan Han
Summary: High-quality polycrystalline SnO films with excellent hole transport characteristics were successfully grown at a low temperature using atomic layer deposition and annealed with intense pulsed light. The crystallinity of the SnO film increased with increasing light pulse number during the annealing process. The surface morphology of the annealed SnO films was smooth and suitable for thin-film transistor fabrication.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Jong Beom Ko, Seong-In Cho, Sang-Hee Ko Park
Summary: In this study, top-gate self-aligned structured oxide thin-film transistors (TFTs) are fabricated with a carefully designed gate insulator (GI) deposition process. A nanometer-thick Al2O3 layer is used as the interface tailoring layer to modulate carrier generation and act as a hydrogen barrier. The optimized devices exhibit high mobility and good stability by adjusting the thicknesses of the interface layers.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Yue Yang, Xiao-Ying Zhang, Chen Wang, Fang-Bin Ren, Run-Feng Zhu, Chia-Hsun Hsu, Wan-Yu Wu, Dong-Sing Wuu, Peng Gao, Yu-Jiao Ruan, Shui-Yang Lien, Wen-Zhang Zhu
Summary: Amorphous gallium oxide thin films were grown using plasma-enhanced atomic layer deposition. The films exhibited decreasing band gap energy and increased density as the temperature increased. The higher substrate temperature also resulted in increased surface roughness. Films grown at temperatures below 200 degrees C were amorphous, while the film grown at 250 degrees C showed slight crystallinity.
Article
Crystallography
Shinyoung Park, Sangwook Youn, Jun Tae Jang, Hyungjin Kim, Dae Hwan Kim
Summary: This paper discusses the correlation between SiO2 deposition thickness and hydrogen content, and analyzes the effect of the SiO2 layer on the properties of synaptic IGZO TFTs. The results show that the SiO2 layer improves the memory window and retention characteristics, and provides guidance for optimizing the hydrogen content.
Article
Chemistry, Physical
Myeong Gil Chae, Seong Ho Han, Bo Keun Park, Taek-Mo Chung, Jeong Hwan Han
Summary: Utilizing a novel Sn complex and H2O as precursors, atomic layer deposition of high-quality SnO thin films was achieved, with amorphous SnO crystallized through rapid thermal annealing. A bottom-gate thin film transistor fabricated using a crystallized SnO channel layer exhibited excellent drain current modulation and p-type behavior.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Analytical
Ming-Jie Yin, Zi-Rong Li, Tian-Run Lv, Ken-Tye Yong, Quan-Fu An
Summary: Research on using poly(acrylic acid) as both a sensing and dielectric layer in the fabrication of flexible OTFT RH sensors has shown significant reduction in driven voltage, with sensitivity manipulatable by tuning the driven voltage, and a fast response time of around 4 seconds for the sensors.
SENSORS AND ACTUATORS B-CHEMICAL
(2021)
Article
Physics, Applied
Riku Kobayashi, Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura
Summary: The characteristics of thin-film transistors (TFTs) with amorphous In2O3 and carbon-doped In2O3 channels after post-metallization annealing (PMA) process were investigated. The In2O3 TFT changed behavior from metallic to switching after PMA at 200 degrees C, while the carbon-doped In2O3 TFT exhibited superior properties due to the reduction of excess oxygen vacancies.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Dong-Hee Kim, Sung-Min Yoon
Summary: In this study, a three-terminal artificial synapse transistor utilizing HfO2 electrolyte-gate insulator (EGI) was proposed. The synaptic plasticity of the fabricated synapse transistor could be modulated by the movement of mobile ions in the EGI, which were dependent on the applied pulse conditions. The device emulated biological synaptic functions and demonstrated a conversion from short-term plasticity (STP) to long-term plasticity (LTP). The choice of HfO2 EGI resulted in improved long-term reliability and operational repeatability.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Chemistry, Physical
Luolan Wang, Jun Zhang, Zhenhui Wang, Wei Xiong, Shihan Yan, Zhiheng Gong, Nian Zhang, Shijun Zhao, Xinwei Wang, Yan Chen
Summary: This work presents an atomic-scale interfacial engineering strategy to construct highly-active electrocatalyst for glucose detection. Ni(OH)(2) nanosheets are decorated with an ultra-thin layer of Co9S8 using the atomic layer deposition (ALD) technique. After in-situ reconstruction, Ni@Co heterostructure consisting of Ni hydroxide nanosheets and CoOx clusters is obtained, which shows outstanding electrochemical glucose sensing performance. The presence of surface CoOx not only lowers the valence state of Ni, but also facilitates the deprotonation of Ni(OH)(2) to form NiOOH active species for glucose oxidation. The approach used in this work can be adapted to synthesizing high-performance electrocatalysts for other energy and environmental devices.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Yuqing Zhang, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: Here we present a self-aligned top gate (SATG) coplanar amorphous InGaZnO (a-IGZO) thin film transistor (TFT) technology with a down-scaled gate length (Lg) of 97 nm and a gate insulator (GI) AlOx of 4 nm (equivalent oxide thickness = 2.4 nm). The fabricated TFT exhibits excellent performance, including a large on-current (ION) of 17.9 mu A/mu m, a high on/off current ratio over 10^(9), a positive threshold voltage (V-TH) of 0.07 V, and a minimum drain-induced barrier lowering (DIBL) of 77 mV/V. These results are attributed to the abrupt homojunction at the source-drain sides and the high-quality ultrathin gate insulator of AlOx by atomic layer deposition (ALD). With the compatibility with modern integrated circuit (IC) process, the developed SATG a-IGZO TFT technology is suitable for back-end-of-line (BEOL) and 3D integrations of advanced ICs.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Yiqian Zhao, Na Yang, Xu Chu, Fuchang Sun, Muhammad Umair Ali, Yuan Zhang, Biao Yang, Yulu Cai, Manyu Liu, Nicola Gasparini, Jiaxin Zheng, Chaohong Zhang, Chuanfei Guo, Hong Meng
Summary: In this study, solvent solketal was used to improve the performance of hydrogels, enabling them to function properly in a wide range of humidity and temperature conditions. The optimized hydrogel demonstrated its unique merits as a dielectric layer in iontronic sensors, with characteristics such as non-leaky ions, high sensitivity, and wide humidity and temperature range applicability. This pioneering work in hydrogel electronics and iontronic sensors will significantly contribute to advancements in these fields.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Junwu Bai, Qian Wang, Xing Xing, Junpeng Ji, Muhammad Umair Ali, Ming Liu, Jingsheng Miao, Hongming Chen, Chaoyi Yan, Xiuru Xu, Kwang-Fu Clifton Shen, Hong Meng
Summary: A new type of AC-OLED architecture with coplanar electrodes is demonstrated, which works in a wide voltage and frequency range, emits light throughout the applied AC signal cycle, and exhibits frequency-dependent color tunability. These devices can be efficiently driven by commonly used electric power supplies without additional back-end electronics. The development of highly efficient color-tunable AC-driven lighting sources is expected to be accelerated.
ORGANIC ELECTRONICS
(2023)
Article
Materials Science, Multidisciplinary
Zhenhui Wang, Yueyue Wang, Manyu Liu, Meili Xu, Zhixiang Jiang, Yuanhong Gao, Hong Meng, Xinwei Wang
Summary: Efficient charge transfer is achieved in narrowband organic photodiodes (OPDs) by adopting a self-assembly strategy to prepare donor/acceptor bulk heterojunctions as the photoactive layers. This method allows for the fabrication of highly smooth, phase-uniform, and low-defect-density thin films with controlled thickness. A narrowband near-infrared OPD centered at 760 nm with a full-width-at-half-maximum of around 60 nm, peak external quantum efficiency of 49%, and peak specific detectivity of over 10(13) Jones under -5 V is achieved.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Yuqing Zhang, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: This paper presents a capacitor-less embedded dynamic random access memory (eDRAM) technology based on oxide semiconductor (OS) transistors and demonstrates a self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) using a simplified three-masks (3M) process. The performance of the TFT is improved by optimizing the gate insulator and interface defects, as well as manipulating the defects in the a-IGZO channel through a rapid thermal anneal. The developed TFTs show high device performance and minimal parasitic capacitances, enabling the realization of a high-performance and high-density monolithic-3D (M3D) integration.
ADVANCED ELECTRONIC MATERIALS
(2023)
Review
Engineering, Manufacturing
Jinxiong Li, Gaoda Chai, Xinwei Wang
Summary: Atomic layer deposition (ALD) has become an essential thin-film technology in the microelectronics industry due to its self-limited layer-by-layer growth feature and the ability to deposit conformal pinhole-free thin films with precise thickness control, especially on 3D structures. This review focuses on the surface chemistry and precursor chemistry aspects of ALD, providing a comprehensive understanding of the involved chemistry to further advance and utilize this technology. The surface chemistry of the gas-solid ALD reactions and the precursor chemistry used in ALD processes are discussed, along with emerging applications in microelectronics and future perspectives of the ALD technology.
INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING
(2023)
Article
Chemistry, Multidisciplinary
Jiaona Zhang, Wantings Wang, Jiahao Zhu, Jialiang Wang, Changbin Zhao, Tianyu Zhu, Qinqi Ren, Qi Liu, Rui Qiu, Min Zhang, Xinwei Wang, Hong Meng, Kuan-Chang Chang, Shengdong Zhang, Mansun Chan
Summary: This paper proposes a monolithic three-dimensional (M3D) CMOS design that achieves ultra-flexible electronics with high electronic performance and integration. By utilizing vertically stacked carbon nanotube and indium gallium zinc oxide transistors, this design saves area and exhibits high flexibility. It also enables the development of wearable light recorders for collecting harmful blue light.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Maria P. P. Davydova, Lingqiang Meng, Mariana I. I. Rakhmanova, Zhenglin Jia, Alexey S. S. Berezin, Irina Yu. Bagryanskaya, Qianqian Lin, Hong Meng, Alexander V. V. Artem'ev
Summary: In recent years, the research on Mn(II)-organic materials with circularly polarized luminescence (CPL) has gained significant interest due to their eco-friendliness, low cost, and room temperature phosphorescence. This study presents the construction of chiral Mn(II)-organic helical polymers using the helicity design strategy, which exhibit long-lived CPL with high g(lum) and φ(PL) values of 0.021% and 89%, respectively, while remaining highly stable against humidity, temperature, and X-rays. Furthermore, the study reveals the negative effect of magnetic field on CPL for Mn(II) materials, suppressing the CPL signal by 4.2 times at B⃗= 1.6 T. The designed materials are also utilized to fabricate UV-pumped CPL light-emitting diodes, demonstrating enhanced optical selectivity under different polarization conditions. Additionally, the reported materials display bright triboluminescence and excellent X-ray scintillation activity, with a linear X-ray dose rate response of up to 174 μGy(air) s(-1). Overall, these findings significantly contribute to the understanding of CPL phenomenon in multi-spin compounds and advance the development of highly efficient and stable Mn(II)-based CPL emitters.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Bin Deng, Yanan Zhu, Xiaowei Wang, Jinlin Zhu, Manyu Liu, Mingqiang Liu, Yaowu He, Caizhen Zhu, Chaohong Zhang, Hong Meng
Summary: This project aims to design a smart window that responds to both electricity and heat, achieving energy efficiency, privacy preservation, and enhanced decorative attributes. By using a novel electrochromic material design and optimizing electrochromic devices, high-performance ECDs with fast color-switching speed and significant transmittance modulation are obtained. Additionally, a thermochromic gel electrolyte is created to provide excellent thermal insulation and further enhance the window's performance. Overall, this work showcases a prospective design pathway for the development of next-generation ultrafast-switching, and energy-efficient intelligent windows.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Physical
Yuhang Guan, Yuqing Zhang, Jinxiong Li, Jiye Li, Yuhan Zhang, Zhenhui Wang, Yuancan Ding, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: In recent years, high-k gate dielectrics have received increasing attention in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) due to the need for stronger gate controllability. This study developed an ultra-thin top-gate insulator of atomic-layer-deposited (ALD) HfOx for amorphous indium-gallium-zinc oxide (a-IGZO) TFTs. However, the reliability of the 4-nm HfOx-gated a-IGZO transistor is poor due to interface defects caused by the interface reaction between HfOx and a-IGZO during the ALD process. To improve stability, the a-IGZO channel is pre-treated with strong oxidizing plasma. However, further reducing HfOx thickness increases gate leakage current.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
Renbo Lei, Yupu Tang, Shihan Yan, Weitao Qiu, Zheng Guo, Xu Tian, Qian Wang, Kai Zhang, Shanshan Ju, Shihe Yang, Xinwei Wang
Summary: This study demonstrates that the plasma-assisted atomic layer deposition technique can effectively improve the photovoltaic performance of BiVO4 photoanodes by installing an ultrathin FeNi layer. This technique successfully addresses the fundamental limitations of BiVO4 photoanodes, leading to enhanced photon-to-current efficiency.
Article
Engineering, Environmental
Qian Wang, Tong Wang, Noureen Laila, Ke Huang, Xinwei Wang, Renbo Lei, Xinyue Bai, Qiyong Xu
Summary: This study presented the hydrothermal synthesis of a photocatalyst by coupling carbon dots (CDs) and bulk TiO2, which exhibited improved photocatalytic performance and bacterial-deactivation ability compared to traditional TiO2. It provides a promising strategy for leachate treatment.
Article
Chemistry, Multidisciplinary
Wei Qian, Weitao Qiu, Shanshan Yu, Duan Huang, Renbo Lei, Xianzhen Huang, Shuang Xiao, Xinwei Wang, Shihe Yang
Summary: The emergence of organic-inorganic hybrid perovskites has enabled the use of aerosol-liquid-solid technology for direct X-ray detectors. However, the film quality from this process is often compromised when deposited in ambient conditions with uncontrolled humidity. In this study, a solvent engineering strategy is developed to obtain high-quality perovskite thick films, minimizing the negative effect of the ambient conditions and improving the overall performance of the X-ray detectors.
Article
Engineering, Electrical & Electronic
Huaqing Huang, Linxin Guo, Yunbiao Zhao, Shengyuan Peng, Wenjun Ma, Xinwei Wang, Jianming Xue
Summary: This study reports a proton detector based on the methylammonium lead tribromide (MAPbBr3) perovskite single crystal, which demonstrates remarkable radiation tolerance. The detector can quantitatively monitor fluence rate and dose up to a high dose of 45 kGy with a low bias electric field. Furthermore, the detector exhibits a desirable self-healing characteristic, rapidly recovering its dark current after irradiation, enhancing its radiation tolerance. These findings suggest that the perovskite-based proton detector shows great promise for future applications in proton therapy, proton radiography, etc.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Jinfei Dai, Chenjing Zhao, Jie Xu, Hossein Roshan, Hua Dong, Francesco Di Stasio, Fang Yuan, Bo Jiao, Zhaoxin Wu
Summary: In this study, the performance of perovskite nanocrystal light emitting diodes (PNC-LEDs) was enhanced through rational device structure design and the application of high-performance perovskite nanocrystal emitting layers.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Jia-Hua Yeh, Suhendro Purbo Prakoso, Leon Lukhas Santoso, Shi-Ju Chen, Bryan Chiang, Ju-Chieh Cheng, Ru-Ning Zhang, Yu-Cheng Chiu
Summary: This study demonstrates the application of a renewable material called dextrin-SMS in the production of electret filters and transistor memory. Dextrin-SMS material can maintain prolonged electrostatic charges and has a relatively wide memory window, making it suitable for the production of biodegradable face masks and green electronics.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Ahmad Telfah, Qais M. Al-Bataineh, Ahmad A. Ahmad, Rund Abu-Zurayk, Carlos J. Tavares, Johannes Etzkorn, Farzad Foadian
Summary: Polyacrylic acid complexed with polyaniline (PAA/PANI) composite materials have the potential to form organic mixed ion-electron conductive (OMIEC) films, which can be used in optoelectronic and energy storage applications. The composite films are formed through an acid-base reaction, resulting in strong electrostatic interactions and intermolecular hydrogen bonds between PANI and PAA. The separation of PANI-rich domains from PAA-rich matrix in the composite films is observed. The electrical conductivity of the composite films is higher when the content of PANI is 33 wt%, due to the high ionic-electronic coupling at the interface between phase-separated regions.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Min-Chih Hou, Dian Luo, Yu-Ting Huang, Shun-Wei Liu, Chin-Wei Lu, Chih-Hao Chang, Hai-Ching Su
Summary: Light-emitting electrochemical cells (LECs) have great potential for novel emission applications, but their relatively low device efficiency hinders their competitiveness with other emission technologies. A study finds that increasing the concentration of small TiO2 nano-particles in the diffuser film can enhance light extraction and improve the device efficiency of LECs.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Qiaoli Niu, Yao Xu, Jun Yang, Wei Hua, Baoxiang Chai, Zequan Zhang, Yuhui Ma, Wenjin Zeng, Ana Flavia Nogueira, Ruidong Xia
Summary: By introducing CPB as a defect passivation agent in the perovskite precursor solution, the optoelectronic properties of perovskite films can be significantly improved and non-radiative carrier recombination can be effectively suppressed. CPB-modified perovskite solar cells exhibit lower trap-state density and stronger carrier migration capability, leading to enhanced power conversion efficiency and stability.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Hulya Ozturk Dogan, Fatma Yildirim, Zeynep Orhan, Ali Ben Ahmed, Mostefa Benhaliliba, Sakir Aydogan
Summary: In this study, efficient self-powered visible and UV photodetectors based on hybrid organic-inorganic materials were demonstrated. The photodetectors showed excellent UV detecting capability and good photoresponsivity.
ORGANIC ELECTRONICS
(2024)
