期刊
ORGANIC ELECTRONICS
卷 14, 期 7, 页码 1825-1832出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2013.04.019
关键词
Organic field effect transistor; Organic-organic hetero-interface; Photoelectron spectroscopy; Atomic force microscopy; Tetratetracontane; Rubrene single crystal
资金
- JSPS [23750209, 21245042]
- TEPCO Memorial Foundation
- Yazaki Memorial Foundation for Science and Technology
- G-COE Program of Chiba University (Advanced School for Organic Electronics [G-3]
- Japan Society for the Promotion of Science (JSPS) through the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)
- Council for Science and Technology Policy (CSTP)
- Sasagawa Scientific Research Grant from The Japan Science Society
- Deutsche Forschungsgemeinschaft (DFG)
- Grants-in-Aid for Scientific Research [21245042, 23750209] Funding Source: KAKEN
Organic field effect transistors (OFETs) using crystalline organic semiconductors are of great interest because of their well-defined structural and electronic properties to study the intrinsic charge carrier transport mechanisms in p-conjugated molecular solids, as well as to unravel their potential to be applied as a novel type of electronic device. In the present study, the valence band structure of the channel region of an OFET is proposed based on photoemission results of a well-defined interface between a dielectric molecular monolayer and single crystals of 5,6,11,12-tetraphenyltetracene (rubrene) which is known to exhibit the highest field effect mobility of all organic semiconductors at room temperature. Commensurate growth of clusters of tetratetracontane (TTC; n-C44H90) on the rubrene single crystal surface and their morphological transformation into a uniform overlayer were observed by atomic force microscopy. Photoelectron spectroscopy measurements at various electron take-off angles were then conducted to derive the valance band width of the rubrene single crystal covered by the TTC overlayers. The valence band width at this hetero-interface was found to be equivalent to that of the pristine rubrene, which suggests an unchanged 'band effective mass (h) over bar (2)(d(2)E/dk(parallel to)(2))' of accumulated holes even at the vicinity of hydrocarbon-based gate dielectrics. (C) 2013 Elsevier B.V. All rights reserved.
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