期刊
ORGANIC ELECTRONICS
卷 13, 期 12, 页码 3296-3301出版社
ELSEVIER
DOI: 10.1016/j.orgel.2012.09.028
关键词
Organic thin-film transistor; Printed electronics; Silver nanoparticle; Room-temperature sintering; Integrated circuits
资金
- Japan Science and Technology Agency (JST)
Organic integrated circuits based on organic thin-film transistor (TFT) devices are fabricated with solution-based electrodes by using dense inks of silver nanoparticles, which can be sintered at room-temperature. The TFT devices fabricated at a sintering temperature of 30 degrees C exhibit good electrical characteristics. There is a strong relation between the sintering temperature of silver nanoparticle inks and transistor characteristics. A work function of silver electrodes can be controlled by changing the sintering temperature of silver nanoparticle inks, thereby threshold voltage of fabricated TFT devices are shifted accordingly. Fabricated pseudo-CMOS inverter circuits are successfully operated at low voltage with small hysteresis, and large gains are obtained. These results suggest that printed organic TFT devices fabricated with a low-temperature process enable large-area and low-cost integrated circuits by using these techniques in future applications. (C) 2012 Elsevier B. V. All rights reserved.
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