期刊
ORGANIC ELECTRONICS
卷 13, 期 12, 页码 2929-2934出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2012.08.017
关键词
Semiconductiong polymer; Photodetectors; Inverted device structure; Infrared spectral response
Solution-processed near-infrared polymer photodetectors with an inverted device structure were designed and fabricated. By introducing ZnOx and MoO3 as an electron extraction layer and a hole extraction layer, respectively, the asymmetric characteristics of the inverted polymer photodetectors was constructed. Operating at room temperature, the inverted polymer photodetectors exhibited the detectivity over 10(12) cm Hz(1/2)/W from 400 to 850 nm, resulting from the enhanced photocurrent and reduced dark current induced by fabricating photoactive layer from solution with processing additive 1,8-diiodooctane. These device performances were comparable to those of inorganic counterparts. (C) 2012 Elsevier B.V. All rights reserved.
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