期刊
ORGANIC ELECTRONICS
卷 13, 期 8, 页码 1289-1295出版社
ELSEVIER
DOI: 10.1016/j.orgel.2012.04.012
关键词
Conductance tuning; Graphene; Memory devices; Poly(N-vinylcarbazole)
资金
- National Natural Science Foundation of China [20904044]
- Ministry of Education of China [NCET-10-0157]
Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(N-vinylcarbazole) (PVK)-graphene composites, are fabricated. The current density-voltage characteristics of the fabricated device show different electrical conductance behaviors, such as insulator behavior, write-once read-many-times (WORM) memory effect, rewritable memory effect and conductor behavior, which depend on the content of graphene in the PVK-graphene composites. The OFF and ON states of the WORM and rewritable memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of -1.0 V. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices. (C) 2012 Elsevier B.V. All rights reserved.
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