期刊
ORGANIC ELECTRONICS
卷 12, 期 1, 页码 98-107出版社
ELSEVIER
DOI: 10.1016/j.orgel.2010.10.007
关键词
Ferroelectric polymer; Static shear; Detachment; Micropattern; Crystal orientation; Non-volatile memory
资金
- Ministry of Knowledge and Economy, Republic of Korea
- MKE/KEIT [10030559]
- Seoul RBD Program [10816]
- Brain Korea 21 Project
- Ministry of Education, Science and Technology [2010K001149]
- Korea government (MEST) [2010-0000425]
We present a one-step route for micropatterning a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film with both molecular and microstructural crystal control over a large area. The method is based on the static mechanical shearing and ;subsequent detachment of a film spin coated on pre-patterned Al which has been lithographically prepared on a SiO2 substrate under appropriate thermal conditions. Selective detachment of the film in contact with the SiO2 substrate gave rise to micropatterns of PVDF-TrFE film positioned only on the Al regions. Further, the PVDF-TrFE film showed 25-nm-thick crystalline lamellae aligned perpendicular to the shear direction, wherein the c axis of the crystals was globally ordered parallel to the shear direction. The sheared and patterned PVDF-TrFE thin films are readily incorporated into non-volatile memory units of metal/ferroelectric/metal capacitors and bottom gate-top contact field effect transistors, leading to arrays of memory devices with enhanced performance. (C) 2010 Elsevier B. V. All rights reserved.
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