Non-volatile organic memory effect with thickness control of the insulating LiF charge trap layer

An organic, electrically bistable device with a novel charge trap system (CTS, LiF/Al/LiF) in the crossbar structure of Al/Alq(3)/(LiF/Al/LiF)/Alq(3)/Al was fabricated to develop a vertically oriented crossbar array memory device. The novel concept of CTS with thickness control (2, 4, and 6 nm) of an insulating LiF layer was introduced. The CTS with a 4.0 nm-thick LiF layer displayed non-volatile memory behavior with a hysteresis having large ON/OFF ratio (more than three orders of magnitude) and had the ability of writing-reading-erasing-reading cycles. No significant degradation of the device was observed in either the ON or OFF state after continuous stress testing (> 2000 s). (C) 2011 Elsevier B.V. All rights reserved.