☆ 4.6 Article

Outcoupling efficiency of organic light emitting diodes and the effect of ITO thickness

ORGANIC ELECTRONICS (2010)

期刊

ORGANIC ELECTRONICS

卷 11, 期 6, 页码 1010-1015

出版社

ELSEVIER

DOI: 10.1016/j.orgel.2010.03.023

关键词

Outcoupling efficiency; Organic light emitting diodes

类别

Materials Science, Multidisciplinary Physics, Applied

资金

Center for Nanoscale Mechatronics Manufacturing [2009K000069]
Ministry of Education, Science and Technology [R31-2008-000-10075-0]
National Research Foundation of Korea [R31-2008-000-10075-0, 14-2008-01-001-00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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摘要

Outcoupling efficiency of bottom emission organic light emitting diodes (OLEDs) have been analyzed using a model (Adv. Chem. Phys. 37 (1987) 1, [17]) based on classical electromagnetic theory with a full vectorial approach. The analyses presented in this study take into account many factors, including the thickness of the ITO layer. Maximum outcoupling efficiencies over 27% and 30% are achievable if thin ITO layers in the range of 50-70 nm and 50-100 nm are used for blue and green phosphorescent OLEDs, respectively. Even higher efficiencies of 29% for the blue and 31.6% for the green OLED can be obtained if we use thicker organic layers supporting two antinodes suggesting that phosphorescent OLEDs can have a much higher external quantum efficiency than 20%. (C) 2010 Elsevier B.V. All rights reserved.

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