Influence of the semiconductor thickness on the charge carrier mobility in P3HT organic field-effect transistors in top-gate architecture on flexible substrates

标题
Influence of the semiconductor thickness on the charge carrier mobility in P3HT organic field-effect transistors in top-gate architecture on flexible substrates
作者
关键词
-
出版物
ORGANIC ELECTRONICS
Volume 11, Issue 5, Pages 814-819
出版商
Elsevier BV
发表日期
2010-01-30
DOI
10.1016/j.orgel.2010.01.023

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