Fabrication and characterization of air-stable, ambipolar heterojunction-based organic light-emitting field-effect transistors

We present our first application of the neutral cluster beam deposition (NCBD) method to fabricate bilayer heterojunction-based organic light-emitting field-effect transistors (OLEFETs) by superimposing two layers of alpha,omega-dihexylsexithiophene (DH6T) and N,N'-ditridecylperylene-3,4.9,10-tetracarboxylic diimide (P13) successively. Based upon well-balanced ambipolarity (hole and electron field-effect mobilities of 2.22 x 10(-2) and 2.78 x 10(-2) cm(2)/Vs), the air-stable CLEFETs have demonstrated good field-effect characteristics, stress-free operational stability and electroluminescence under ambient condition. (C) 2009 Elsevier B.V. All rights reserved.