Article
Engineering, Electrical & Electronic
Joern Vahland, Karl Leo, Hans Kleemann
Summary: In this study, quasi-self-aligned organic thin-film transistors (OTFTs) were fabricated using wet-chemical etching to reduce parasitic overlap capacitances, leading to improved performance of the transistors. The self-aligned design resulted in a significant reduction of specific overlap capacitance and showed potential for high-frequency operation of organic transistors.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Iqbal Preet Singh, Hassan Rahbardar Mojaver, Pouya Valizadeh
Summary: The study investigates the reverse gate-leakage of AlGaN/GaN HFETs at different drain-source voltages, revealing that Fowler-Nordheim tunneling contributes to leakage predominantly at the gate center for lower drain-source voltages, while at higher drain-source voltages, leakage occurs mainly at the drain edge. The electron effective mass is consistently chosen within an acceptable range for analyzing gate-leakage.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Aleksei A. Parfenov, Alexander V. Mumyatov, Diana K. Sagdullina, Alexander F. Shestakov, Pavel A. Troshin
Summary: HAT(CN)(6) has shown promise as a semiconductor material for various organic electronic applications, including gas sensors. Organic field-effect transistors based on HAT(CN)(6) exhibit decent charge carrier mobility and high sensitivity towards low concentrations of ammonia, with quantum chemical DFT calculations revealing the underlying supramolecular interactions.
Review
Engineering, Electrical & Electronic
Xin Ma, Hongquan Chen, Peiwen Zhang, Martin C. Hartel, Xiaona Cao, Sibel Emir Diltemiz, Qinglei Zhang, Javed Iqbal, Natan Roberto de Barros, Liyan Liu, Hao Liu
Summary: This paper describes the working principles of OTFT, including OFET and OECT, and compares the differences between them. It also discusses the potential for OTFT in biomarker sensing applications and improving patient outcomes.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Anastasia Svetlova, Dmitry Kireev, Guillermo Beltramo, Dirk Mayer, Andreas Offenhaeusser
Summary: Graphene field-effect transistors are commonly used in biosensor development, but questions remain about gate/leakage currents in electrolyte-gated configurations. Gate currents in graphene can be capacitive or Faradic, depending on doping by holes or electrons. Faradic currents are related to oxygen reduction in solution and increase with measurement cycles, indicating enhanced electroactivity towards electron transfer.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Analytical
Jong Hyeok Oh, Yun Seop Yu
Summary: This study investigated the tunneling effect in a N-type feedback field-effect transistor (NFBFET). The NFBFET has a highly doped N-P junction in the channel region, and when a drain-source voltage is applied, band-to-band tunneling (BTBT) current can be formed on the surface region of the N-P junction. The alignment between the conduction band of the N-region and the valence band of the P-region occurs, resulting in an increase in off-currents. However, as a gate-source voltage is applied, the tunneling rate decreases due to a reduction in the aligned region between bands caused by a stronger gate-field. The tunneling currents eventually vanish before reaching the threshold voltage at the BTBT vanishing point. Increasing the doping concentration in the gated-channel region results in the generation of tunneling current not only on the surface region but also in the bulk region, leading to shorter tunneling lengths and increased leakage currents. The BTBT vanishing point also increases as the tunneling rates at the surface and bulk regions increase.
Article
Materials Science, Multidisciplinary
Namrata Shaw, Bratati Mukhopadhyay
Summary: In this study, a novel n-channel dual material double gate tunnel field effect transistor (DMDG-TFET) with a gate-drain underlap using Ge and Ge1-zSnz was proposed. An analytical model was developed to optimize the length of the underlap region for Ge and Ge-Sn alloy as the channel material. The ambipolarity of TFET was leveraged for label-free biosensing based on the permittivity change of the biomaterials in the gate-drain underlap region. The use of Ge-Sn alloy as a channel material exhibited lower ambipolar current but higher sensitivity to biomolecules, and DMDG with specific workfunctions (4 and 4.4 eV) was applied for device optimization. The analytical results were validated with Silvaco TCAD and demonstrated high sensitivity of the biosensor device with optimized gate underlap of L-UD = 55 nm (for Ge) and L-UD = 38 nm (for Ge-Sn alloy).
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Poornima Mittal, Sugandha Yadav, Shubham Negi
Summary: This paper highlights the recent progress of organic small molecule and polymer thin film transistors, focusing on structural variations between top and bottom contact organic TFTs, analytical models for performance forecasting, various organic materials' performance, and techniques for enhancing transistor parameters. The importance of self-assembled monolayers and reliability of organic transistors are also emphasized, along with leading applications of OTFTs over time.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Engineering, Electrical & Electronic
Ankit Verma, Praveen Kumar Sahu, Vivek Chaudhary, Arun Kumar Singh, V. N. Mishra, Rajiv Prakash
Summary: In this work, an efficient ammonia gas sensor based on a polymer/2D material nanocomposite was fabricated and characterized. The sensor exhibited promising sensing performance with a limit of detection of 904 ppb and a sensing response of 63.45% at 100 ppm ammonia concentration. The fabricated sensor has potential applications in high-performance ammonia sensing.
IEEE SENSORS JOURNAL
(2022)
Article
Chemistry, Analytical
Haiwu Xie, Hongxia Liu
Summary: This paper proposes a new type of heterostructure junctionless tunnel FET biosensor with an embedded nanogap, which can electrically sense the characteristics of biomolecules. The detection sensitivity of different biomolecules can be adjusted by two different gates. The influence of different gate work functions and dielectric constants on sensitivity is explored, and the simulation results show high switch ratio and sensitivity for the proposed biosensor.
Article
Engineering, Electrical & Electronic
Bin Lu, Yan Cui, Aixin Guo, Dawei Wang, Zhijun Lv, Jiuren Zhou, Yuanhao Miao
Summary: The combination of InAs/GaSb heterojunction and the line-tunneling mechanism is a promising approach for achieving high ON-state current and low subthreshold swing in TFETs. By introducing an N+ doped buried drain to form a reverse biased p-n junction, leakage current path can be effectively cut off in InAs/GaSb LTFETs, resulting in excellent performance without additional fabrication complexity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Computer Science, Information Systems
Giorgiana-Catalina Ilie (chiranu), Cristian Tudoran, Otilia Neagoe, Florin Draghici, Gheorghe Brezeanu
Summary: This paper describes a nonvolatile switch based on n-type floating-gate transistors, where switch states are programmed through memory cell floating-gate voltage. The advantages include higher levels than the application supply, reduced power consumption, and on-state resistance not depending on supply voltage, making it suitable for low-voltage applications.
Article
Chemistry, Physical
Chin-Sheng Pang, Shu-Jen Han, Zhihong Chen
Summary: TFETs have emerged as a potential candidate to outperform conventional FETs at low voltages, with their operation mechanism overcoming the fundamental subthreshold swing limit. CNT-based TFETs show excellent performance with a minimum SS of 41 mV/dec and nearly no temperature dependence, paving a promising path for low-power electronic applications. TFET devices using CNTs with smaller bandgaps exhibit a record high BTBT current, indicating potential for high performance electronic applications.
Article
Chemistry, Analytical
Dong Wang, Hongxia Liu, Hao Zhang, Ming Cai, Jinfu Lin
Summary: In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed, which induces electrons and holes in an intrinsic silicon film by inserting a ferroelectric film into the polarity gate to create the p-source and n-drain regions. The device performance is independent of the chemical doping profile, eliminating issues related to abrupt junctions, dopant variability, and solid solubility. Simulation results show an improved ON-state current and I-ON/I-OFF ratio, with a significant increase in the on-state current of Fe-ED NSTFET. The study suggests that Fe-ED can be an effective doping strategy for versatile reconfigurable nanoscale transistors and highly integrated circuits.
Article
Engineering, Multidisciplinary
Thinh Dang Cong, Phuc Ton That Bao, Trang Hoang
Summary: The study aimed to virtually fabricate and characterize a 65 nm process Floating-gate MOS transistor. The proposed fabrication process and parameters were used to virtually fabricate the complete transistor with extraordinary performances. The results showed the characteristics of the device under a thin thickness of 9 nm tunnel oxide layer and low supply voltages.
AIN SHAMS ENGINEERING JOURNAL
(2023)
Article
Materials Science, Multidisciplinary
Jinfei Dai, Chenjing Zhao, Jie Xu, Hossein Roshan, Hua Dong, Francesco Di Stasio, Fang Yuan, Bo Jiao, Zhaoxin Wu
Summary: In this study, the performance of perovskite nanocrystal light emitting diodes (PNC-LEDs) was enhanced through rational device structure design and the application of high-performance perovskite nanocrystal emitting layers.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Jia-Hua Yeh, Suhendro Purbo Prakoso, Leon Lukhas Santoso, Shi-Ju Chen, Bryan Chiang, Ju-Chieh Cheng, Ru-Ning Zhang, Yu-Cheng Chiu
Summary: This study demonstrates the application of a renewable material called dextrin-SMS in the production of electret filters and transistor memory. Dextrin-SMS material can maintain prolonged electrostatic charges and has a relatively wide memory window, making it suitable for the production of biodegradable face masks and green electronics.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Ahmad Telfah, Qais M. Al-Bataineh, Ahmad A. Ahmad, Rund Abu-Zurayk, Carlos J. Tavares, Johannes Etzkorn, Farzad Foadian
Summary: Polyacrylic acid complexed with polyaniline (PAA/PANI) composite materials have the potential to form organic mixed ion-electron conductive (OMIEC) films, which can be used in optoelectronic and energy storage applications. The composite films are formed through an acid-base reaction, resulting in strong electrostatic interactions and intermolecular hydrogen bonds between PANI and PAA. The separation of PANI-rich domains from PAA-rich matrix in the composite films is observed. The electrical conductivity of the composite films is higher when the content of PANI is 33 wt%, due to the high ionic-electronic coupling at the interface between phase-separated regions.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Min-Chih Hou, Dian Luo, Yu-Ting Huang, Shun-Wei Liu, Chin-Wei Lu, Chih-Hao Chang, Hai-Ching Su
Summary: Light-emitting electrochemical cells (LECs) have great potential for novel emission applications, but their relatively low device efficiency hinders their competitiveness with other emission technologies. A study finds that increasing the concentration of small TiO2 nano-particles in the diffuser film can enhance light extraction and improve the device efficiency of LECs.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Qiaoli Niu, Yao Xu, Jun Yang, Wei Hua, Baoxiang Chai, Zequan Zhang, Yuhui Ma, Wenjin Zeng, Ana Flavia Nogueira, Ruidong Xia
Summary: By introducing CPB as a defect passivation agent in the perovskite precursor solution, the optoelectronic properties of perovskite films can be significantly improved and non-radiative carrier recombination can be effectively suppressed. CPB-modified perovskite solar cells exhibit lower trap-state density and stronger carrier migration capability, leading to enhanced power conversion efficiency and stability.
ORGANIC ELECTRONICS
(2024)
Article
Materials Science, Multidisciplinary
Hulya Ozturk Dogan, Fatma Yildirim, Zeynep Orhan, Ali Ben Ahmed, Mostefa Benhaliliba, Sakir Aydogan
Summary: In this study, efficient self-powered visible and UV photodetectors based on hybrid organic-inorganic materials were demonstrated. The photodetectors showed excellent UV detecting capability and good photoresponsivity.
ORGANIC ELECTRONICS
(2024)