Article
Engineering, Electrical & Electronic
Shinji Matsuo, Takuma Aihara, Tatsurou Hiraki, Yoshiho Maeda, Toshiki Kishi, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka
Summary: Silicon photonics is a crucial technology for large-scale photonic integrated circuits due to its capability of high uniformity and quality wafer processes. This paper focuses on the heterogeneous integration of membrane III-V compound semiconductor photonic devices, which offer optical gain and high modulation efficiency. The use of a simple taper waveguide structure enables efficient optical coupling with a Si waveguide. Furthermore, the micro-transfer-printing technology allows for device selection and integration on Si substrates, facilitating the development of transmission modules with low power consumption.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Karan Mehta, Olufemi Dosunmu, Priya Merani, Kalyan Sikder, Chenyang Wu, Pari Patel, Jordan Davis, David Gold, Shenghong Huang, Kanakaraju Subramaniam, Adam Bowles, Amir Ghetmiri, Shane Yerkes, William O'Brien, Richard Jones
Summary: We demonstrate heterogeneously integrated O-band superluminescent diodes (SLDs) that can emit 10 mW of continuous-wave output power at a device temperature of up to 65 degrees C. The SLD has a wall-plug efficiency of 3.1% at 25 degrees C and 1.3% at 65 degrees C, with an optical bandwidth of 20-30 nm and a spectral modulation of 0.13 (1.1 dB) at 25 degrees C and 0.09 (0.8 dB) at 65 degrees C. This breakthrough in output power and efficiency opens up new possibilities for cheaper and more compact SLD-based photonics integrated circuits.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2023)
Article
Optics
Ya Han, Xian Zhang, Rui Ma, Mengyue Xu, Heyun Tan, Jie Liu, Ruijun Wang, Siyuan Yu, Xinlun Cai
Summary: The increasing traffic has driven the demand for compact, high-speed, and low-power-consumption optical transmitters. In this study, a widely tunable optical transmitter based on a thin-film lithium niobite platform is demonstrated, and its performance characteristics are presented.
Article
Optics
Xian Zhang, Xiaoyue Liu, Rui Ma, Zichao Chen, Zhuohui Yang, Ya Han, Bing Wang, Siyuan Yu, Ruijun Wang, Xinlun Cai
Summary: In this study, the co-integration of InP-based LEDs and photodetectors on an LNOI photonics platform is presented. The light is coupled between the LNOI and III-V waveguides via a multiple-section adiabatic taper. The waveguide-coupled LEDs have a 3-dB bandwidth of 40 nm, while the photodetector exhibits a responsivity of 0.38 A/W in the 1550-nm wavelength range and a dark current of 9 nA at -0.5V at room temperature.
Article
Multidisciplinary Sciences
Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann, Kirsten E. Moselund
Summary: This study successfully achieved the seamless integration of III-V nanostructures on silicon and demonstrated the performance of scaled and waveguide coupled III-V photodiodes. Furthermore, it was found that the temperature increase during device operation as an emitter was only approximately 15 K according to experimental and simulation results.
NATURE COMMUNICATIONS
(2022)
Article
Optics
Wen-Qi Wei, An He, Bo Yang, Zi-Hao Wang, Jing-Zhi Huang, Dong Han, Ming Ming, Xuhan Guo, Yikai Su, Jian-Jun Zhang, Ting Wang
Summary: This article introduces an embedded InAs/GaAs quantum dot (QD) laser directly grown on a SOI substrate, enabling monolithic integration with silicon waveguides. By resolving the epitaxy and fabrication challenges, embedded III-V lasers on SOI with continuous-wave lasing are obtained, providing a scalable and low-cost epitaxial method for future high-density photonic integration.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Engineering, Electrical & Electronic
Javad Rahimi, Joris Van Kerrebrouck, Bahawal Haq, Johan Bauwelinck, Gunther Roelkens, Geert Morthier
Summary: This paper demonstrates the high wall-plug efficiency and low threshold current of heterogeneously integrated III-V-on-Silicon distributed feedback (DFB) lasers. A wall plug efficiency of over 12% is achieved for a 200 μm long DFB laser diode at 25 degrees C, with up to two times 6 mW of optical power coupled into the silicon waveguide and a side-mode suppression ratio of more than 40 dB. The paper also discusses the non-return-to-zero on-off keying modulation at 20 Gb/s and the transmission over a 2 km long optical fiber.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Optics
Guilherme F. M. de Rezende, Newton C. Frateschi, Gunther Roelkens
Summary: We have designed, fabricated, and characterized a III-V-on-Si laser with photonic molecule mirrors, having high potential for laser tunability and control. The resonant mirrors are created by manipulating supermodes of coupled microrings. Experimental results show a laser threshold of 40 mA (L-band), series resistance of 10 St, and side mode suppression ratio of 40 dB.
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
(2023)
Article
Multidisciplinary Sciences
Benwen Chen, Xinru Wang, Weili Li, Chun Li, Zhaosong Wang, Hangbin Guo, Jingbo Wu, Kebin Fan, Caihong Zhang, Yunbin He, Biaobing Jin, Jian Chen, Peiheng Wu
Summary: An integrated self-adaptive metasurface (SAM) with THz wave detection and modulation capabilities has been developed, showing great potential in THz communication applications by eliminating coverage dead zones and providing a platform for intelligent electromagnetic information processing in the THz regime.
Article
Engineering, Electrical & Electronic
Jacob S. S. Levy, Erman Timurdogan, Yu-Sheng Kuo, Gap Youl Lyu, Charles Tsai, Xuejin Yan, Harqkyun Kim, Cristian Stagarescu, Kevin Meneou, Abu Thomas, Ioannis Fragkos, Geoffrey Sitwell, Andrea Trita, Yangyang Liu, Melissa Ziebel, Jerry Byrd, Sven Steinbach, Bruce Chou, William Vis, Arin Abed, Young Kwon, Henri Nykanen, Shih-Han Lo, Janne Ikonen, Juha Larismaa, John Drake, Albert Benzoni, Cyriel Minkenberg, Thomas Schrans, Andrew Rickman
Summary: This article presents a silicon photonic based transmitter and receiver chipset for 4x106Gb/s 400 GBASE-DR4 data rates. The transmitter chip achieves high extinction ratio and optical modulation amplitude (OMA) for each channel, with low TDECQ penalty in compliance with the IEEE standard. The receiver chips exhibit high responsivity and low polarization dependent loss. The use of discrete III-V arrayed components hybridized onto the silicon platform and passive alignment of single-mode fibers provides a low-cost, compact and scalable solution that can be extended to higher aggregate rates and channel count.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Yu Han, Ying Xue, Zhao Yan, Kei May Lau
Summary: Epitaxially integrating III-V lasers with Si-photonics using selective area hetero-epitaxy on industry-standard silicon-on-insulator (SOI) platforms has been investigated. By selectively growing InP on (001)-oriented SOI wafers, InP stripes and segments were demonstrated, enabling efficient light interfacing with Si-based photonic devices. The potential of utilizing this selective area growth method to realize fully integrated Si-photonics is illustrated.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Article
Optics
Hongzhou Bai, Guowen Liu, Kai Wang, Gaolei Chang, Shanzhi Zang, Cheng Tan, Lianghua Gan, Yueheng Zhang, Li He, Gangyi Xu
Summary: We report on the operation of 1D terahertz quantum cascade microlaser arrays working on various bound states in the continuum. By breaking the inversion symmetry of the microlaser array, we first created a quasi-bound state in the continuum, enabling flexible control of the radiation efficiency. We then hybridized the quasi-bound state with a high-Q surface plasmon polariton mode to further increase the operating temperature of the microlaser.
Article
Optics
Weiqiang Xie, Chao Xiang, Lin Chang, Warren Jin, Jonathan Peters, John E. Bowers
Summary: This study proposes a general heterogeneous integration approach to embed highly nonlinear III-V (AlGaAs) photonics into the silicon-on-insulator (SOI) platform, aiming to extend the capabilities of on-chip devices. By developing low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides, the researchers successfully demonstrate sub-milliwatt-threshold Kerr frequency comb generation in ultrahigh-Q AlGaAs microrings. This integration of mature silicon photonics technology with efficient nonlinear functionalities provided by III-V materials advances the emerging applications of chip-based nonlinear engines.
PHOTONICS RESEARCH
(2022)
Article
Optics
Panisa Dechwechprasit, Harrison Lees, Daniel Headland, Christophe Fumeaux, Withawat Withayachumnankul
Summary: This article introduces a reconfigurable switch device used in terahertz circuit and system designs to control and manipulate the flow of terahertz signals. The experimental results show that the switch has low insertion loss and high extinction ratio, and has the potential to achieve reconfigurable beam control in future applications.
Proceedings Paper
Optics
Joan Manel Ramirez, Claire Besancon, Delphine Neel, Jean Decobert, Stephane Malhouitre, Christophe Jany, Karim Hassan, David Bitauld
Summary: This work presents the latest advancements in the development of widely tunable lasers using heterogeneous integration technology, combining an InP-based photonic platform with Al-based multiple quantum wells and silicon photonic integrated circuits on a SOI platform.
2022 PHOTONICS NORTH (PN)
(2022)
Article
Optics
Jan Chochol, Kamil Postava, Michael Cada, Mathias Vanwolleghem, Martin Micica, Lukys Halagacka, Jean-Francois Lampin, Jaromir Pistora
JOURNAL OF THE EUROPEAN OPTICAL SOCIETY-RAPID PUBLICATIONS
(2017)
Article
Optics
Aloyse Degiron, Mathias Vanwolleghem, David R. Smith
Article
Engineering, Electrical & Electronic
Philipp Latzel, Fabio Pavanello, Maximilien Billet, Sara Bretin, Alexandre Beck, Mathias Vanwolleghem, Christophe Coinon, Xavier Wallart, Emilien Peytavit, Guillaume Ducournau, Mohammed Zaknoune, Jean-Francois Lampin
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
(2017)
Article
Chemistry, Analytical
Francis Hindle, Lotta Kuuliala, Meriem Mouelhi, Arnaud Cuisset, Cedric Bray, Mathias Vanwolleghem, Frank Devlieghere, Gael Mouret, Robin Bocquet
Article
Optics
Martin Micica, Sophie Eliet, Mathias Vanwolleghem, Roman Motiyenko, Anastasia Pienkina, Laurent Margules, Kamil Postava, Jaromir Pistora, Jean-Francois Lampin
Article
Optics
L. Halagacka, M. Vanwolleghem, F. Vaurette, J. Ben Youssef, K. Postava, J. Pistora, B. Dagens
Article
Engineering, Electrical & Electronic
Romain Peretti, Sergey Mitryukovskiy, Kevin Froberger, Mohamed Aniss Mebarki, Sophie Eliet, Mathias Vanwolleghem, Jean-Francois Lampin
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
(2019)
Article
Engineering, Electrical & Electronic
Elias Akiki, Mattias Verstuyft, Bart Kuyken, Benjamin Walter, Marc Faucher, Jean-Francois Lampin, Guillaume Ducournau, Mathias Vanwolleghem
Summary: This article presents an ultrahigh-Q cavity at terahertz frequencies, achieved through a low-loss suspended silicon waveguide and optimized deep reactive ion etching processing. Adjustments to different cavity layouts were made to maximize transmittance while maintaining high Q values.
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
(2021)
Article
Optics
Mattias Verstuyft, Elias Akiki, Mathias Vanwolleghem, Guillaume Ducournau, Jean-Francois Lampin, Benjamin Walter, Fuanki Bavedila, Edouard Lebouvier, Marc Faucher, Bart Kuyken
Summary: Dielectric waveguides can confine and guide terahertz waves in sub-wavelength sized structures. In this study, a very short silicon 90 degrees-bend with an average loss of 0.14 dB per bend in the 600-750 GHz range is demonstrated.
Article
Physics, Applied
G. Lezier, P. Kolejak, J. -f. Lampin, K. Postava, M. Vanwolleghem, N. Tiercelin
Summary: This study presents an efficient voltage control method for the polarization state of THz spintronic emitters, without the need for any magnetic bias control. Experimental results demonstrate reversible THz polarization rotation within a specific range of film layer structure and voltage.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Pierre Kolejak, Geoffrey Lezier, Kamil Postava, Jean-Francois Lampin, Nicolas Tiercelin, Mathias Vanwolleghem
Summary: This study presents an improved scheme for achieving full 360 degrees coherent polarization rotation in THz spintronic emitters. By replacing the ferromagnetic layer with a carefully designed anisotropic heterostructure, the researchers demonstrate Stoner-Wohlfarth-like coherent rotation of THz polarization using bipolar variation of the hard axis field. The emission efficiency of these emitters is only slightly decreased compared to standard emitters, making them well-suited for polarimetric characterization without the need for mechanically rotating polarizing elements.
Article
Optics
Felix Paries, Nicolas Tiercelin, Geoffrey Lezier, Mathias Vanwolleghem, Felix Selz, Maria-Andromachi Syskaki, Fabian Kammerbauer, Gerhard Jakob, Martin Jourdan, Mathias Klaeui, Zdenek Kaspar, Tobias Kampfrath, Tom S. Seifert, Georg Von Freymann, Daniel Molter
Summary: A novel fiber-tip spintronic terahertz emitter solution that allows full fiber-coupling is proposed, providing a simple and straightforward terahertz near-field imaging system.
Proceedings Paper
Optics
Romain Peretti, Martin Micica, Sergey Mitryukovskiy, Kevin Froberger, Sophie Eliet, Mathias Vanwolleghem, Jean-Francois Lampin
NONLINEAR OPTICS AND ITS APPLICATIONS 2018
(2018)
Proceedings Paper
Engineering, Electrical & Electronic
O. Stepanenko, T. Horak, S. Mitryukovskiy, R. Peretti, J. Chochol, K. Postava, J. -F. Lampin, M. Vanwolleghem
2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
(2018)
Proceedings Paper
Engineering, Electrical & Electronic
Jan Chochol, Martin Micica, Kamil Postava, Mathias Vanwolleghem, Jean-Francois Lampin, Michael Cada, Jaromir Pistora
2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
(2018)
