Article
Optics
Zhicheng Wang, Zheng Peng, Yuqing Zhang, Yilu Wu, Jiagui Wu, Junbo Yang
Summary: This research presents the design of an optical power splitter with ultra-broadband and ultra-low insertion loss using two inverse design algorithms for staged optimization. The Y-junction photonic power splitter achieves a 700 nm wavelength bandwidth (from 1200 nm to 1900 nm) with a 0.2 dB insertion loss, corresponding to a 93 THz frequency bandwidth. The average insertion loss in the valuable C-band is approximately -0.057 dB. Additionally, a comprehensive comparison of insertion loss performance for different types and sizes of curved waveguides is provided, along with cases of 1:4 and 1:6 cascaded power splitters. These scalable Y-junction splitters offer new alternatives for high-performance photonic integration.
Article
Optics
Changjian Xie, Xihua Zou, Fang Zou, Yong Zhang
Summary: High-performance ultra-compact polarization splitter-rotators (PSRs) are designed and experimentally demonstrated, using dual etching and a tapered asymmetrical directional coupler. Experiment results show that the extinction ratio exceeds 28 dB or 32 dB at 1550 nm for the launched fundamental transverse magnetic or the transverse electric modes, with corresponding insertion loss and polarization conversion loss of 0.33 dB and 0.18 dB respectively.
CHINESE OPTICS LETTERS
(2021)
Article
Optics
Yuxiao Liu, Hongxiang Li, Weiwei Chen, Pengjun Wang, Shixun Dai, Bohao Zhang, Jun Li, Yan Li, Qiang Fu, Tingge Dai, Hui Yu, Jianyi Yang
Summary: This paper proposes a polarization beam splitter using a pixelated directional coupler, with carefully selected structural parameters to achieve an ultra-compact coupling length, successfully achieving high-performance polarization separation.
OPTICS COMMUNICATIONS
(2021)
Article
Telecommunications
Li Zhang, Jiaqi Liu, Can Pan, Yatao Yang
Summary: In this paper, an asymmetric polarizing beam splitter utilizing hybrid plasmonic waveguides is presented. The device features the ability to confine TE and TM modes to different layers, allowing for beam splitting by adjusting the parameters of the waveguides. The design demonstrates ultra-compactness, low propagation loss, and broad bandwidth, making it suitable for optical interconnection and polarization multiplexing systems.
CHINA COMMUNICATIONS
(2023)
Article
Optics
Fang Wang, Yake Chen, Chuanqiang Li, Tao Ma, Xu Wang, Kun Yu, Lei Li
Summary: An asymmetric directional coupler based on a GaAs-CaF2 hybrid plasmonic waveguide and a GaAs nanowire is designed for a mid-infrared polarization beam splitter in this paper. The TE polarization mode in the GaAs nanowire undergoes strong coupling while the TM mode passes through the GaAs-CaF2 hybrid plasmonic waveguide directly. The results show high extinction ratios and low insertion losses for both TE and TM modes at the operating wavelength.
OPTICS COMMUNICATIONS
(2022)
Article
Optics
Lifeng Cai, Dingshan Gao, Jianji Dong, Jin Hou, Chunyong Yang, Shaoping Chen, Xinliang Zhang
Summary: In this paper, a compact silicon-based multimode ring resonator with high Q-factors for the three lowest TE modes is designed. The mode loss and inter-mode crosstalk are suppressed using a multimode waveguide bend and directional couplers. The device is fabricated using a simple one-step lithography process.
Article
Optics
Fang Wang, Hua Liu, Tao Ma, Shoudao Ma, Yufang Liu
Summary: This study proposes a high extinction ratio (ER) wideband mid-infrared polarization beam splitter based on a GaAs hybrid plasma tridirectional coupler. The designed beam splitter exhibits high ER and low insertion loss, making it potentially useful for applications such as air molecule detection and analysis, as well as optical communication.
OPTICAL ENGINEERING
(2023)
Article
Optics
Jiefeng Xu, Yingjie Liu, Xiaoyuan Guo, Jiangbing Du, Ke Xu
Summary: An analog and digital topology optimization method is proposed to design an ultra-broadband polarization beam splitter at the 2 mu m waveband in this research. The device demonstrates excellent performance with compact footprint.
Article
Optics
Zakriya Mohammed, Bruna Paredes, Mahmoud Rasras
Summary: We presented a novel TE-pass polarizer on a silicon-on-insulator platform. The polarizer achieves filtering and extinction by phase-matched coupling and bending the unwanted modes. Experimental results demonstrate low insertion loss, high extinction ratio, and wide bandwidth.
Article
Engineering, Electrical & Electronic
Hong Cao, Rui-Qiang Zhao, Hang Chen
Summary: These two novel couplers can achieve complete transfer of light from one waveguide to another, shorten the length by modulating parameter nu, and construct beam splitters by modulating the length.
OPTICAL AND QUANTUM ELECTRONICS
(2021)
Article
Optics
Qiyuan Yi, An Pan, Jinsong Xia, Cheng Zeng, Li Shen
Summary: This study proposes a 3 dB power splitter based on adiabatic mode evolution using a thin-film lithium niobate, with ultra-broadband operation bandwidth. The fabricated device exhibits low insertion losses and covers both conventional and emerging spectral bands.
Article
Optics
Jia-Min Liu, De-Long Zhang
Summary: This study proposes a compact, high-performance polarization beam splitter (PBS) based on a triple-waveguide coupler consisting of two thin-film LiNbO3-on-insulator (LNOI) waveguides and an amorphous silicon (alpha-Si) nanostrip assisted waveguide. By using the alpha-Si nanostrip, the PBS achieves phase matching conditions for TM polarization mode but not for TE polarization mode. Numerical results show that the PBS has a length of only 31 μm and achieves an ultra-high polarization extinction ratio (>29.4 dB) and an ultra-low insertion loss (<0.066 dB) for the TE polarization mode in the wavelength range of 1500-1600 nm, as well as a polarization extinction ratio of >20 dB and an insertion loss of <0.16 dB over a -60 nm bandwidth from 1527 nm to 1587 nm for the TM polarization mode. Moreover, the device has a larger feature size that facilitates fabrication.
OPTICS AND LASER TECHNOLOGY
(2023)
Article
Chemistry, Analytical
Chao Mei, Yuan Wu, Jinhui Yuan, Shi Qiu, Xian Zhou
Summary: In this paper, a polarization beam splitter (PBS) based on surface plasmonic resonance is designed and realized in a photonic crystal fiber (PCF). The proposed PBS achieves a shorter length and a wider operating bandwidth.
Article
Optics
Baizhu Lin, Shijie Sun, Yuanhua Che, Tianhang Lian, Mu Zhu, Xueqing Sun, Xibin Wang, Daming Zhang
Summary: In this study, two designs of few-mode 3-dB power splitters based on symmetric directional couplers are proposed and experimentally demonstrated using polymer waveguides. By optimizing the coupling distance and coupling length, the devices are designed to be insensitive to the mode. The measured results show that the power splitting ratio for the dual-mode 3-dB power splitter supporting E11 and E21 modes is 0.5:0.5, with insertion losses of -5.1 dB and -5.5 dB respectively, at a wavelength of 1550 nm. The power splitting ratio for the three-mode 3-dB power splitter supporting E11, E21, and E12 modes is also 0.5:0.5, with insertion losses of -6.1 dB, -6.4 dB, and -6.7 dB respectively at 1550 nm. These few-mode 3-dB power splitters have the potential to support more modes and can find important applications in mode (de)multiplexing systems.
OPTICS AND LASER TECHNOLOGY
(2023)
Article
Optics
Dongsheng Lv, Longsheng Wu, Chenyang Liu, Ang Li, Ruxue Wang, Aimin Wu
Summary: This paper proposes a broadband and low-loss directional coupler (DC) designed for signal power tapping on the 3 μm silicon-on-insulator (SOI) waveguide platform. Experimental evidence indicates that the proposed DC showcases a minimal variation in the tapping ratio, with the largest deviation of 1.433% away from the tapping ratio at 1550 nm. Additionally, the device exhibits a low excess loss of -0.27 dB. These results suggest that the proposed device is well-suited to reliable signal power tapping and monitoring, particularly within photonic integrated circuits (PICs).
Article
Materials Science, Multidisciplinary
Chen Shang, Jennifer Selvidge, Eamonn Hughes, Justin C. Norman, Aidan A. Taylor, Arthur C. Gossard, Kunal Mukherjee, John E. Bowers
Summary: With recent developments in high-speed and high-power electronics and Si-based photonic integration, monolithic III-V/Si integration through epitaxial methods is gaining momentum. A novel asymmetric step-graded filter structure grown by molecular beam epitaxy (MBE) has been proposed to reduce threading dislocation density (TDD) for high-quality GaAs on Si growth, providing a clear pathway to further reduce defect density down to theoretical limit.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Optics
Akhilesh S. P. Khope, Roger Helkey, Songtao Liu, Sairaj Khope, Rod C. Alferness, Adel A. M. Saleh, John E. Bowers
Summary: A new hybrid broadband-crossbar switching network is presented in this Letter, which can switch multiple wavelengths on demand and supports multicast. The switch fabric is an improvement over previous designs in terms of switch footprint and power consumption, reducing the number of switching elements by approximately 50%. Experimental results on 64 second-order ring resonators and more than 250 heaters are discussed to comment on the fabrication tolerance.
Article
Engineering, Electrical & Electronic
Matteo Buffolo, Lorenzo Rovere, Carlo De Santi, Daehwan Jung, Justin Norman, John E. Bowers, Robert W. Herrick, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Summary: This paper investigates the impact of dislocation density and active layer structure on the degradation mechanisms of 1.3 μm InAs Quantum Dot (QD) lasers for silicon photonics. The results show that devices grown on native substrate exhibit higher temperature stability, while devices with higher number of layers have higher roll-off currents and degradation rates.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2021)
Article
Physics, Applied
Luca Galletti, Arman Rashidi, David A. Kealhofer, Manik Goyal, Binghao Guo, Yuntian Li, Chen Shang, John E. Bowers, Susanne Stemmer
Summary: This study utilizes a Corbino measurement geometry to observe the behavior of Dirac fermions in three-dimensional topological insulators under a strong magnetic field. The results show that in the quantum Hall regime, the transverse voltage exhibits a series of plateaus, compared with traditional Hall bar measurements.
APPLIED PHYSICS LETTERS
(2021)
Review
Physics, Applied
A. Malik, C. Xiang, L. Chang, W. Jin, J. Guo, M. Tran, J. Bowers
Summary: Silicon photonics has emerged as a leader in the next generation of consumer products, with a focus on complex optical functionalities such as on-chip lasers. This paper reviews the impact of silicon photonic chips on improving tuning range and noise characteristics significantly, covering two key wavelength bands for optical communications.
APPLIED PHYSICS REVIEWS
(2021)
Article
Engineering, Electrical & Electronic
Christopher R. Fitch, Igor P. Marko, Aidas Baltusis, Daehwan Jung, Justin C. Norman, John E. Bowers, Stephen J. Sweeney
Summary: Silicon-based laser diodes demonstrate high performance and stable operation at relatively low temperatures. The study shows that p-doping can increase the temperature sensitivity of the devices, but also results in higher threshold current densities.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Matteo Buffolo, Federico Lain, M. Zenari, Carlo De Santi, Justin Norman, John E. Bowers, Robert W. Herrick, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Summary: This paper investigates the origin of the optical degradation of InAs quantum dot laser diodes epitaxially grown on silicon. The temperature acceleration of the degradation process is quantitatively evaluated through constant-current stress experiments at different temperatures. The results suggest that the degradation is related to the recombination-enhanced diffusion of Be, the p-type dopant, or the lattice defects limiting Be diffusion. These findings provide new insights on the microscopic origin of the gradual optical degradation of quantum-dot lasers and have wide application in silicon photonics.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Review
Optics
Lin Chang, Songtao Liu, John E. Bowers
Summary: Integrated photonics offers an attractive approach to realizing optical frequency comb sources, potentially revolutionizing fields such as information processing, time-frequency metrology, and sensing. The article comprehensively examines strategies for optical frequency comb generation in integrated photonics and provides detailed appraisals in the context of prospective applications. High-level integration of optical frequency combs in photonic integrated circuits is summarized, along with a proposed roadmap for transitioning advanced optical frequency comb systems from the lab to the broader world.
Article
Materials Science, Multidisciplinary
Zeyu Zhang, Chen Shang, Justin C. Norman, Rosalyn Koscica, Kaiyin Feng, John E. Bowers
Summary: Quantum dot (QD) lasers grown on silicon have shown promising characteristics, but the technology enabling growth and integration of these lasers on a silicon photonic chip has not yet been demonstrated. A novel device platform has been designed to integrate the QD active region with passive waveguide structures, allowing for the successful demonstration of various high-performance lasers on this platform.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Mario Dumont, Songtao Liu, M. J. Kennedy, John Bowers
Summary: This paper focuses on the efficiency of optical combs generated by quantum dot mode-locked lasers (QDMLLs) and compares their performance with other light sources.
APPLIED SCIENCES-BASEL
(2022)
Article
Optics
Weiqiang Xie, Chao Xiang, Lin Chang, Warren Jin, Jonathan Peters, John E. Bowers
Summary: This study proposes a general heterogeneous integration approach to embed highly nonlinear III-V (AlGaAs) photonics into the silicon-on-insulator (SOI) platform, aiming to extend the capabilities of on-chip devices. By developing low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides, the researchers successfully demonstrate sub-milliwatt-threshold Kerr frequency comb generation in ultrahigh-Q AlGaAs microrings. This integration of mature silicon photonics technology with efficient nonlinear functionalities provided by III-V materials advances the emerging applications of chip-based nonlinear engines.
PHOTONICS RESEARCH
(2022)
Article
Optics
Akhilesh S. P. Khope, Robert Zhang, Roger Helkey, Rod C. Alferness, Adel A. M. Saleh, John E. Bowers
Summary: This article presents a compact 4x4 wavelength selective switch with 50% fewer electrical signal pads compared to the previous generation. The loss and crosstalk of the switch in different paths are reported and measured. The results show a median loss of 5.32 dB and a worst-case crosstalk of -35 dB. The improvement in the tuning range of microring resonators compared to the previous generation is also demonstrated. The switch is capable of supporting 8 channels with a spacing of 400 GHz.
Article
Engineering, Electrical & Electronic
Paul A. Morton, Chao Xiang, Jacob B. Khurgin, Christopher D. Morton, Minh Tran, Jon Peters, Joel Guo, Michael J. Morton, John E. Bowers
Summary: This paper introduces a new Integrated Coherent Tunable Laser (ICTL) that offers ultra-wideband wavelength tuning and ultra-low noise performance. The ICTL is designed to be cost-effective and reliable through its utilization of III-V material and a CMOS foundry based Silicon Photonics platform. The ICTL's exceptional laser reflector performance, extended laser cavity length, and low linewidth and phase noise enable highly-coherent output. The ICTL has achieved record integrated laser performance and shows great potential for next-generation applications such as WDM transmission systems, fiber-optic and medical-wearable sensing systems, and automotive LiDAR systems.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Joshua E. Castro, Trevor J. Steiner, Lin Chang, Quynh Dang, Weiqiang Xie, Chenlei Li, Justin Norman, John E. Bowers, Galan Moody
Summary: This study presents a time-energy entangled photon pair source from an AlGaAs microring resonator with a high internal generation rate, heralded single photon purity, and visibility.
2021 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)
(2021)
Article
Optics
Peiqi Zhou, Bo Wang, Xingjun Wang, Bing Wang, Yandong He, John E. Bowers
Summary: The proposed erbium-based waveguide amplifier utilizes a GaAs-on-silicon-pumped design and locally pumped gain region for on-chip amplification. It provides high-quality electrically driven amplification with a maximum saturated gain of 42.5 dB/cm and modulation bandwidth of approximately 42 GHz, showcasing the benefits of erbium-doped materials and silicon-based III-V semiconductors.
