期刊
OPTICS EXPRESS
卷 22, 期 26, 页码 31875-31883出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.22.031875
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资金
- National Research Foundation of Korea(NRF) - Korea government(MSIP) [NRF-2014R1A2A2A01006378]
Herein, we will propose a new application possibility of epsilon-near-zero (ENZ) materials: high resolution wide-field imaging. We show that the resolution can be dramatically enhanced by simply inserting a thin epsilon-near-zero (ENZ) material between the sample and substrate. By performing metal half-plane imaging, we experimentally demonstrate that the resolution could be enhanced by about 47% with a 300-nm-thick SiO2 interlayer, an ENZ material at 8-mu m-wavelength (1250 cm(-1)). The physical origin of the resolution enhancement is the strong conversion of diffracted near fields to quasi-zeroth order far fields enabled by the directive emission of ENZ materials. (C) 2014 Optical Society of America
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