Article
Chemistry, Inorganic & Nuclear
M. Raja, R. Marnadu, M. Balaji, K. Ravikumar, V. Gopala Krishna, Mohanraj Kumar, Ehab El Sayed Massoud
Summary: In this work, gallium-doped tungsten trioxide (Ga@WO3) films and n-Ga@WO3/p-Si diodes were fabricated. The impact of Ga dopant on the physical properties of WO3 films was analyzed. The results showed that higher Ga dopant concentrations led to the presence of Ga in the crystal structure of o-GaWO3. The doped WO3 thin film exhibited higher conductivity and lower activation energy at room temperature. The performance of n-WO3/p-Si diodes was enhanced with Ga dopant concentration.
INORGANIC CHEMISTRY COMMUNICATIONS
(2022)
Article
Chemistry, Physical
P. Suveetha Dhanaselvam, D. Sriram Kumar, V. N. Ramakrishnan, K. Ramkumar, N. B. Balamurugan
Summary: Heterojunction diodes have efficient applications in sensors design and fabrication at the nanoscale. These heterostructures, formed by merging two dissimilar semiconductors, find uses in bioelectronics and miniaturized sensors based on material combinations.
Article
Materials Science, Multidisciplinary
Zhaohua Wang, Mingfeng Zhi, Manzhang Xu, Chen Guo, Zhenwu Man, Zhiyong Zhang, Qiang Li, Yuanyuan Lv, Wu Zhao, Junfeng Yan, Chunxue Zhai
Summary: Sb-doped SnO2/ZnO nano-heterojunctions were prepared using a microwave hydrothermal method, and the effects of Sb-doping on the morphology and gas sensor performance of SnO2/ZnO NHs were studied in detail. The study found that Sb-doping changed the morphology of SnO2 and enhanced the gas sensor response.
JOURNAL OF MATERIALS SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Pawan Kumar, Sumit Chaudhary, Md Arif Khan, Ruchi Singh, Myo Than Htay, Rahul Prajesh, Ajay Agarwal, Shaibal Mukherjee
Summary: In this study, we investigated the effects of the ZnO cap layer on the mobility (mu), sheet carrier density (ns), and conductance (ns x mu) of dual ion beam sputtering grown MgZnO/CdZnO (MCO) heterostructure with and without a Y2O3 spacer layer. The results show that the addition of a 30-nm ZnO cap layer significantly enhances the mu by about 2.3 times compared to the uncapped MCO heterostructure with a spacer layer. These findings are important for the development of cost-effective and large area MCO-based heterostructure field-effect transistors (HFETs) for sensor, microwave, and power devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Multidisciplinary
Jing Zhou, Kai Ou, Wenting Zhang, Yongliang Tang, Yuxiang Ni, Yudong Xia, Lin Shu, Hongyan Wang
Summary: Solar energy utilization is considered as a promising and cost-effective solution for energy and environmental problems. In this study, V-doped ZnO films with different V contents were produced through co-sputtering deposition for photocatalytic applications. The introduction of V elements was found to significantly affect the morphology, band structure, and photoelectric properties of the material.
Article
Chemistry, Physical
Junwei Hou, Yafei Wang, Jingyi Zhou, Yuan Lu, Yansheng Liu, Xiaoyi Lv
Summary: ZnO/TiO2 heterojunction nanomeshes were successfully synthesized by anodizing and calcination. The HNMs showed higher methylene blue photodegradation capacity compared to pure TiO2 nanomeshes. The effects of different parameters on MB photodegradation were investigated, with the sample calcinated at 600 degrees C achieving superior photocatalytic activity.
SURFACES AND INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Cao Phuong Thao, Dong-Hau Kuo, Thi Tran Anh Tuan
Summary: By using RF reactive sputtering technology, Sb0.14GaN films were successfully grown on different substrates at various temperatures, leading to structural and property changes in the deposited films. The highest deposition temperature resulted in the Sb0.14GaN film with the smallest bandgap and highest hole concentration. Testing of the p-Sb0.14GaN/n-Si heterojunction diode at different temperatures showed temperature variation affecting the electrical characteristics of the diode.
Article
Engineering, Electrical & Electronic
Annan Yang, Bin Yao, Zhanhui Ding, Rui Deng, Yongfeng Li
Summary: A white light-emitting diode (LED) based on the n-SrTiO3 (n-STO)/p-GaN heterojunction demonstrates good rectification characteristics and intense white light emission. The device exhibits strong and broad emission bands in both blue to red and ultraviolet to blue regions, originating from the p-type GaN and n-type STO layers respectively. This heterojunction structure shows promise for achieving LEDs with high intense white light emission.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Analytical
Seyeon Park, Peresi Majura Bulemo, Won-Tae Koo, Jaehyun Ko, Il-Doo Kim
Summary: By utilizing solid-solution doping and catalytic metal nanoparticles, superior acetylene sensing capabilities were achieved through porous metal oxide nanofibers. The high porosity of the metal oxide nanofibers, prepared using electrospinning and sacrificial templating, was essential for high gas permeability and active sites. Ga-doped ZnO porous NFs functionalized with Pt catalysts demonstrated the highest C2H2 sensing responses with exceptional selectivity and stability against interfering gases.
SENSORS AND ACTUATORS B-CHEMICAL
(2021)
Article
Optics
Yuzhou Sun, Mingming Jiang, Binghui Li, Xiuhua Xie, Chongxin Shan, Dezhen Shen
Summary: In this work, individual ZnO microbelts doped with Ga (ZnO:Ga) were studied for their applicability in lateral microresonator Fabry-Perot (FP) microlasers. Introducing Ag nanoparticles (AgNPs) on the microbelts improved the FP lasing characteristics, including lower threshold and enhanced output. Notably, large AgNPs showed a redshift and broadening of lasing peaks with increasing excitation fluence. The stimulated radiation in an AgNPs@ZnO:Ga microbelt was attributed to the Mott transition from excitonic state to electron-hole plasma (EHP) state. This study provides insights into the transition between excitonic and EHP states and offers a new approach for developing high-efficiency and ultra-low threshold microlasing diodes.
Article
Energy & Fuels
Nasrin Siraj Lopa, Mohammad Karbalaei Akbari, Di Wu, Francis Verpoort, Serge Zhuiykov
Summary: Sub-10 nm 2D SnO2-ZnO heterostructures were constructed on Au-modified SiO2/Si wafers using atomic layer deposition (ALD) for high-performance electrochemical supercapacitors (ESCs). The heterostructure electrode exhibited pseudocapacitive-type Faradaic redox reactions with good reversibility. It achieved a high specific capacitance (Cs) of 538.90 F g-1 at a scan rate and current density of 10 mV s-1 and 8.0 A g-1, respectively. The high energy storage capacity and excellent electrochemical robustness of the 2D heterostructure electrode were attributed to the nanoscale thickness, improved infiltration and intercalation/deintercalation, and enhanced redox activity of the heterostructure.
Article
Optics
Xiangbo Zhou, Kunjie Ma, Mingming Jiang, Changzong Miao, Caixia Kan, Daning Shi
Summary: High-brightness and high-efficiency low-dimensional light sources have been achieved by synthesizing ZnO microwires with heavily Ga-impurity using chemical vapor deposition methods, and assembling them directly on p-GaN substrate to form heterostructure light-emitting devices. The single microwire acts as a conductance electrode and efficient luminescence layer, emitting bright blue/green lighting under forward bias, and strong broadband white emission under reverse bias, with the ability to switch between colors. This color-switchable light-emitting diode based on single microwires holds promise for miniaturized, smart light sources with independent control over color and brightness.
OPTICS AND LASERS IN ENGINEERING
(2021)
Article
Nanoscience & Nanotechnology
Sourabh Pal, Sayan Bayan, Dipak K. Goswami, Samit K. Ray
Summary: The fabrication of boron carbonitride (BxCyNz) nanosheets with doped g-C3N4 and h-BN nanodomains and the demonstration of superior light-emission characteristics with unique negative thermal quenching (NTQ) attributes opens up the possibility for next-generation light-emitting and display systems with outstanding luminescence stability. The ternary nanosheets exhibit p-type conductivity upon the incorporation of C into the h-BN lattice, and show unique NTQ characteristics in photoluminescence emission, making them stupendous for the fabrication of superior-performance light-emitting diodes with lower injection current density at room temperature. The fabricated heterojunction based on BxCyNz nanosheets/ZnO nanorods displays broadband white-light emission with superior intensity at a much lower turn-on voltage of approximately 3 V.
ACS APPLIED NANO MATERIALS
(2021)
Article
Materials Science, Ceramics
Qiuzi Luo, Yihua Sun, Xin Lv, Long Huang, Liang Fang, Rui Wang
Summary: Al and Ga co-doped ZnO/g-C3N4 heterojunction was synthesized and showed excellent photocatalytic performance in degrading methylene blue under visible light illumination.
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
(2022)
Article
Materials Science, Multidisciplinary
Smita Dey, Souvik Das, Asit Kumar Kar
Summary: The study investigates the role of different precursors on the nanostructure of hydrothermally synthesized ZnO. It is found that pencil-like nanorods obtained from zinc acetate precursor exhibit the highest photoluminescence intensity. Additionally, external electroluminescence efficiency of the nanorods is determined to be 1.2% at a turn-on voltage of 2.6 V, showing potential for application in light emitting diodes.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Ritesh Bhardwaj, Pankaj Sharma, Rohit Singh, Shaibal Mukherjee
IEEE PHOTONICS TECHNOLOGY LETTERS
(2017)
Article
Engineering, Electrical & Electronic
Rohit Singh, Md Arif Khan, Shaibal Mukherjee, Abhinav Kranti
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Engineering, Electrical & Electronic
Md Arif Khan, Rohit Singh, Shaibal Mukherjee, Abhinav Kranti
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Physics, Applied
Pankaj Sharma, Aaryashree, Vivek Garg, Shaibal Mukherjee
JOURNAL OF APPLIED PHYSICS
(2017)
Article
Chemistry, Physical
Aaryashree, Pankaj Sharma, Biswajit Mandal, Ankan Biswas, Manoj K. Manna, Sayan Marti, Apurba K. Das, Shaibal Mukherjee
JOURNAL OF PHYSICAL CHEMISTRY C
(2017)
Article
Nanoscience & Nanotechnology
Vivek Garg, Brajendra S. Sengar, Vishnu Awasthi, Amitesh Kumar, Rohit Singh, Shailendra Kumar, C. Mukherjee, V. V. Atuchin, Shaibal Mukherjee
ACS APPLIED MATERIALS & INTERFACES
(2018)
Article
Engineering, Electrical & Electronic
Md Arif Khan, Rohit Singh, Ritesh Bhardwaj, Amitesh Kumar, Amit Kumar Das, Pankaj Misra, Abhinav Kranti, Shaibal Mukherjee
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Ritesh Bhardwaj, Pankaj Sharma, Rohit Singh, Mukul Gupta, Shaibal Mukherjee
IEEE SENSORS JOURNAL
(2018)
Article
Engineering, Electrical & Electronic
Biswajit Mandal, Aaryashree, Rohit Singh, Shaibal Mukherjee
IEEE SENSORS JOURNAL
(2018)
Article
Engineering, Electrical & Electronic
Rohit Singh, Md. Arif Khan, Shaibal Mukherjee, Abhinav Kranti
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2018)
Article
Physics, Applied
Rohit Singh, Md Arif Khan, Pankaj Sharma, Myo Than Htay, Abhinav Kranti, Shaibal Mukherjee
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2018)
Article
Physics, Applied
Pankaj Sharma, Ritesh Bhardwaj, Amitesh Kumar, Shaibal Mukherjee
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2018)
Article
Nanoscience & Nanotechnology
Mangal Das, Amitesh Kumar, Rohit Singh, Myo Than Htay, Shaibal Mukherjee
Article
Physics, Applied
Pankaj Sharma, Ritesh Bhardwaj, Rohit Singh, Shailendra Kumar, Shaibal Mukherjee
APPLIED PHYSICS LETTERS
(2017)
Article
Physics, Applied
Vishnu Awasthi, Vivek Garg, Brajendra S. Sengar, Sushil Kumar Pandey, Aaryashree, Shailendra Kumar, C. Mukherjee, Shaibal Mukherjee
APPLIED PHYSICS LETTERS
(2017)
