期刊
OPTICS EXPRESS
卷 21, 期 21, 页码 25324-25332出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.21.025324
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- Federal Ministry of Education and Research (BMBF) as part of the MISTRAL project [01BL0800]
We present detailed investigations of the local strain distribution and the induced second-order optical nonlinearity within strained silicon waveguides cladded with a Si3N4 strain layer. Micro-Raman Spectroscopy mappings and electro-optic characterization of waveguides with varying width w(WG) show that strain gradients in the waveguide core and the effective second-order susceptibility chi((2))(yyz) increase with reduced w(WG). For 300 nm wide waveguides a mean effective chi((2))(yyz) of 190 pm/V is achieved, which is the highest value reported for silicon so far. To gain more insight into the origin of the extraordinary large optical second-order nonlinearity of strained silicon waveguides numerical simulations of edge induced strain gradients in these structures are presented and discussed. (C) 2013 Optical Society of America
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