期刊
OPTICS EXPRESS
卷 21, 期 7, 页码 8320-8330出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.21.008320
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资金
- Science and Engineering Research Council of A*STAR (Agency for Science, Technology and Research), Singapore [092-154-0098]
An extremely compact Si phase modulator is proposed and validated, which relies on effective modulation of the real part of modal index of horizontal metal-insulator-Si-insulator-metal plasmonic waveguides by a voltage applied between the metal cover and the Si core. Proof-of-concept devices are fabricated on silicon-on-insulator substrates using standard complementary metal-oxide-semiconductor technology using copper as the metal and thermal silicon dioxide as the insulator. A modulator with a 1-mu m-long phase shifter inserted in an asymmetric Si Mach-Zehnder interferometer exhibits 9-dB extinction ratio under a 6-V/10-kHz voltage swing. Numerical simulations suggest that high speed and low driving voltage could be achieved by shortening the distance between the Si core and the n(+)-contact and by using a high-kappa dielectric as the insulator, respectively. (c) 2013 Optical Society of America
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