期刊
OPTICS EXPRESS
卷 21, 期 25, 页码 31560-31566出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.21.031560
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Science, ICT & Future Planning [R15-2008-006-02001-0]
- Ministry of Trade, Industry & Energy and Korea Institute for Advancement of Technology (KIAT) [R0000499]
We report on the effect of a p-type MgZnO electron blocking layer (EBL) on the optical and electrical properties of MgZnO/ZnO multiple quantum wells (MQWs) light-emitting diodes (LEDs). The p-type Mg0.15Zn0.85O EBL was introduced between the MQWs and p-type Mg0.1Zn0.9O layers. The p-type Mg0.15Zn0.85O EBL increased the ultraviolet emission by 111.2% at 60 mA and decreased the broad deep-level emission from ZnO LEDs. The calculated band structures and carrier distribution in ZnO LEDs show that p-type Mg0.15Zn0.85O EBL effectively suppresses the electron overflow from MQWs to p-type Mg0.1Zn0.9O and increases the hole concentration in the MQWs. (C) 2013 Optical Society of America
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