4.6 Article

Observation of unusual optical transitions in thin-film Cu(In,Ga)Se2 solar cells

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OPTICS EXPRESS
卷 20, 期 23, 页码 A836-A842

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OPTICAL SOC AMER
DOI: 10.1364/OE.20.00A836

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  1. Green Technology Research Center of Chang Gung University
  2. National Science Council (NSC) of Taiwan [NSC97-2112-M-182-004-MY3, NSC-100-2112-M-182 -004]

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In this paper, we examine photoluminescence spectra of Cu(In,Ga)Se-2 (CIGS) via temperature-dependent and power-dependent photoluminescence (PL). Donor-acceptor pair (DAP) transition, near-bandedge transition were identified by their activation energies. S-shaped displacement of peak position was observed and was attributed to carrier confinement caused by potential fluctuation. This coincides well with the obtained activation energy at low temperature. We also present a model for transition from V-Se to V-In and to V-Cu which illustrates competing mechanisms between DAPs recombinations. (C) 2012 Optical Society of America

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