期刊
OPTICS EXPRESS
卷 20, 期 13, 页码 13612-13621出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.20.013612
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资金
- CEA, French National Agency (ANR) through LETI
We study the electro optical properties of a Metal-Nitride-Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si3N4 layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry. Optical transmission measurments conducted in a MNOS channel waveguide configuration coupled to standard silicon photonics circuitry confirms the very low optical losses (0.39 dB.mu m(-1)), in good agreement with predictions using ellipsometric optical constants of Cu. (C) 2012 Optical Society of America
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