4.6 Article

Polarization-insensitive subwavelength grating reflector based on a semiconductor-insulator-metal structure

期刊

OPTICS EXPRESS
卷 20, 期 14, 页码 14991-15000

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OPTICAL SOC AMER
DOI: 10.1364/OE.20.014991

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  1. Chinese National Key Basic Research Special Fund/CNKBRSF [2011CB922002, 2012CB933501]
  2. National Natural Science Foundation of China [61025025, 61137003, 60838003]

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We present a polarization-insensitive subwavelength grating reflector based on a semiconductor-insulator-metal structure. The polarization-insensitive characteristic originates from the combined effect of the TM-polarized high-reflectivity high-index-contrast subwavelength grating and the TE-polarized metallic (Au) subwavelength grating with the addition of the insulator layer. The overlapped high reflectivity (>99.5%) bandwidth between the transverse electric polarization and the transverse magnetic polarization is 89 nm. This polarization-insensitive subwavelength grating reflector can be used in the applications without a preferred polarization. (c) 2012 Optical Society of America

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