期刊
OPTICS EXPRESS
卷 19, 期 18, 页码 17212-17219出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.19.017212
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- Federal Ministry of Education and Research (BMBF) [01BL0800]
We demonstrate for the first time a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides. By depositing a Si3N4 strain layer directly on top of the silicon waveguide the silicon crystal is asymmetrically distorted. Thus its inversion symmetry is broken and a linear electro-optic effect is induced. Electro-optic characterization yields a record high value chi((2))(yyz) = 122 pm/V for the second-order susceptibility of the strained silicon waveguide and a strict linear dependence between the applied modulation voltage V-mod and the resulting effective index change Delta n(eff). Spatially resolved micro-Raman and terahertz (THz) difference frequency generation (DFG) experiments provide in-depth insight into the origin of the electro-optic effect by correlating the local strain distribution with the observed second-order optical activity. (C) 2011 Optical Society of America
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