期刊
OPTICS EXPRESS
卷 19, 期 22, 页码 21692-21697出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.19.021692
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资金
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Knowledge Economy [20104010100640]
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2010-0028021, 2011-0004270]
- ONR
The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire / p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto pre-patterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure light-emitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction. (C)2011 Optical Society of America
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