Effects of growth temperature for buffer layers on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

标题
Effects of growth temperature for buffer layers on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy
作者
关键词
-
出版物
OPTICAL MATERIALS
Volume 34, Issue 9, Pages 1543-1548
出版商
Elsevier BV
发表日期
2012-04-28
DOI
10.1016/j.optmat.2012.03.024

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