期刊
出版社
ELSEVIER
DOI: 10.1016/j.nimb.2013.10.028
关键词
Graphene; Ion bombardment; Computational simulation; Defects
类别
资金
- Brazilian agency CNPq-PROMETRO
- Brazilian agency FA-PERJ
- Brazilian agency FINEP
- Brazilian agency INCT - Nanomateriais de Carbono
- Brazilian agency Rede Brasileira de Pesquisa e Instrumentacao em NanoEspectroscopia Optica
We construct a model to obtain the density of point defects in N-layer graphene by combining Raman spectroscopy and the TRIM (Transport Range of Ions in Matter) simulation package. The model relates the intensity (or area) ratio of graphene's D and G bands to the defect density on each layer due to Ar+ bombardment. Our method is effective for ion fluences ranging from 10(11) to similar to 10(14) Ar+/cm(-2) and it should be in principle extendable to any kind of ion and energy. (C) 2013 Elsevier B.V. All rights reserved.
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