期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2011.12.029
关键词
Ion implantation; Radiation damage; GaN; Bulk defect peak
类别
资金
- RFBR [10-08-91751]
- US DOE by LLNL [DE-AC52-07NA27344]
We propose a model that explains both saturation and a shift of the maximum of bulk disorder profiles in ion-implanted GaN. Our model is based on two main assumptions that (i) the advancing amorphous/crystalline interface acts as a perfect sink for mobile point defects generated in the crystal bulk and (ii) the diffusion length of mobile defects increases with increasing ion fluence due to saturation of defect sinks in the bulk. (C) 2011 Elsevier B.V. All rights reserved.
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