期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2011.12.052
关键词
Point defects; Ab initio calculations; Silicon carbide
类别
资金
- GENCI-CINES [2011-gen6018]
- GENCI-CCRT [2011-gen6018]
We employ the GW approximation to calculate the properties of the carbon vacancy, a prominent defect in irradiated 3C-SiC. The GW method has been recently proposed for point defects in order to cure the band gap problem of the usual approximations. However, its application relies on stringent approximations, such as the calculation of the relaxation energies of the atomic structures from another simpler approximation, namely the local density approximation. We assess here the validity of this approach in the complex case of the carbon vacancy. Finally, the calculated properties of the carbon vacancy are greatly affected by the use of the GW approximation with respect to earlier studies. The carbon vacancy is a rather shallow donor with a negative U behavior. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据