Ultra-high depth resolution SIMS for the interface analysis of complex low-dimensional structures

The flexibility of sputter sectioning, in combination with the principal advantages of the mass spectrometric techniques, such as large dynamic ranges both in the mass separation and detection systems, has enabled the dynamic secondary ion mass spectrometry (SIMS) to be an extremely sensitive technique for the analysis of solid surfaces and thin films. SIMS depth profiling is now possible at depth resolutions down to similar to 2 nm with quantification data obtainable from the topmost atomic layer onwards into the depth. With optimized experimental conditions, like extremely low primary beam current (down to similar to 10 nA) and low impact energy (below 1 keV), appropriate impact angle and with effective profile reconstruction approaches, ultra-high resolution SIMS depth profiling has enabled interfacial composition analysis of ultra-thin films, Bragg mirrors, quantum wells, hetero-structures, etc. and interfacial alloys in metallic multilayer with high precision and repeatability. The paper addresses some of our recent studies on high depth resolution SIMS analysis of such low-dimensional structures and their interfaces. (c) 2008 Elsevier B.V. All rights reserved.