期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 86, 期 -, 页码 418-424出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2015.08.011
关键词
InGaN/GaN quantum wells; Ag nanoparticle; Surface plasmon resonance; Photoluminescence; Carrier dynamics
资金
- National Natural Science Foundation of China [51171077, 61301015]
- National Basic Research Program of China (973 Program) [2014CB932302, 2009CB930501]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
An analysis of the complex mechanisms of enhanced photoluminescence (PL) from InGaN/GaN quantum wells (QWs) by surface plasmon (SP) coupling is reported. Silver nanopartides were deposited on the QWs to generate a wide surface plasmon resonance (SPR) band covering both PL excitation and emission wavelengths. Significant enhancement of the integrated PL intensity, a blue shift of the PL peak wavelength, a suppression of the relative contribution of PL from In-rich quantum dot-like structures, and an increased PL decay time were observed in temperature-dependent and time-resolved PL spectroscopy. In addition to an enhanced radiative recombination rate by resonant coupling the spontaneous emissions to SPs, QW carrier dynamics can be significantly affected by SPR-enhanced, light-induced local fields. The latter occurs because of screening of the quantum-confined Stark effect and the enhanced localization of carriers. (C) 2015 Elsevier Ltd. All rights reserved.
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