Article
Physics, Applied
Jinyi Du, Pengfei Zhu, Pei Song, Kun Zhu, Yunxia Ping, Chaomin Zhang, Xiaohui Sun
Summary: This paper explores the two-dimensional characteristics of a metal-oxide-semiconductor (MOS) sensor with high sensitivity by preparing Ti-SiO2-Si samples. The experiment demonstrates that the lateral photovoltage (LPV) sensitivity decreases gradually as the laser scanning direction deviates from the line between two electrodes. Additionally, the relationship between LPV and laser point position is found to be nonlinear, with symmetry observed when the scanning direction is perpendicular to the line between the electrodes. The mechanism of the lateral photovoltaic effect is explained by carrier diffusion theory, with further experiments and calculations confirming the correlation between the difference in laser point position and LPV. A mathematical equation describing this relationship is proposed as a new method for two-dimensional displacement detection in MOS sensors.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Xiao-Qiang Chen, Yu-Hua Xiong, Jun Du, Feng Wei, Hong-Bin Zhao, Qing-Zhu Zhang, Wen-Qiang Zhang, Xiao-Ping Liang
Summary: The effect of N-2-plasma-treated SiO2 interfacial layer on the interfacial and electrical characteristics of HfO2/SiO2/p-Si stacks grown by ALD was investigated. It was found that the samples with N-2-plasma treatment have a lower density of oxygen vacancies in the SiO2 interfacial layer and a better HfO2/SiO2 interface compared to samples without N-2-plasma treatment. The electrical measurements also showed better interfacial quality and electrical performance for the samples with N-2-plasma treatment.
Article
Chemistry, Physical
V. V. Balashev, K. S. Ermakov, D. A. Tsukanov, A. Yu. Samardak, A. V. Ognev, A. S. Samardak
Summary: This study investigates the influence of magnetite film thickness on its electrical, magnetic, and magnetotransport properties. It is found that the saturation magnetization increases nonmonotonically with film thickness, reaching its maximum at 170 nm. Films with a thickness of more than 150 nm show a significant decrease in resistivity, while the lowest coercive force is observed at a film thickness of 100 nm. The magnetoresistance value reaches -2.5% at a thickness of 50 nm and remains almost unchanged with further increase in the thickness of the textured film. The textured-F3O4/SiO2/n-Si(001) junction with amorphous SiO2 barrier shows promise for Si-based spintronic devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Review
Engineering, Electrical & Electronic
Amelia H. Peterson, Shayla M. Sawyer
Summary: Ultraviolet photodetectors have critical applications in various fields, with wide-bandgap metal oxide semiconductors being high performance options. However, the complicated analysis and design of these detectors is hindered by oxygen adsorption and photodesorption. Clarifying these processes may lead to the development of new UV photodetectors with higher efficiency.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Yu Fu, Shozo Kono, Hiroshi Kawarada, Atsushi Hiraiwa
Summary: MOS capacitors with C-Si-O diamond as semiconductors and SiO2/Al2O3 as gate insulators were fabricated and characterized, showing excellent electrical performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Optics
Menghan Jia, Fang Wang, Libin Tang, Jinzhong Xiang, Kar Seng Teng, Shu Ping Lau, Yanfei Lu
Summary: UV photodetectors based on metal oxide heterostructures have gained significant interest due to their excellent performance and ease of fabrication. In this study, a UV photodetector consisting of p-NiO/SiO2/n-ZnO heterostructure was prepared by RF magnetron sputtering method, exhibiting remarkable performances such as high rectification ratio, responsivity, and external quantum efficiency at low power consumption.
OPTICS AND LASER TECHNOLOGY
(2023)
Article
Physics, Applied
Kangcheng Sun, Xiaohan Chen, Qingkang Ren, Chao Wang
Summary: The influence of SiO2 layer thickness on the magnetoresistance (MR) performance of graphene nano-crystalline carbon film/SiO2/p-Si heterostructures was investigated. It was found that a 5 nm SiO2 interlayer significantly improved the MR performance. Only small negative MR values were observed for SiO2 layers with thicknesses of 50 nm and above. The mobility variations of heterostructures were highly consistent with their MR performance.
APPLIED PHYSICS LETTERS
(2022)
Article
Optics
Shuhei Ohno, Qiang Li, Naoki Sekine, Hanzhi Tang, Stephane Monfray, Frederic Boeuf, Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka
Summary: This study proposes a microring resonator (MRR) optical switch based on III-V/Si hybrid MOS optical phase shifter with an ultrathin InP membrane. By optimizing the device structure, a low power consumption, thermal-crosstalk-free, high-Q-factor MRR optical switch has been successfully demonstrated.
Article
Polymer Science
Jingying Zhang, Kang Meng, Gang Ni
Summary: Organic/silicon hybrid structures have been extensively studied for solar cell applications due to their high efficiency and simple fabrication process. However, there is still limited research on the lateral photovoltaic effects in these devices. In this study, Si/SiO2/PEDOT:PSS devices were prepared and showed higher lateral photovoltage sensitivity compared to control samples. The enhancement of lateral photovoltaic effects was mainly attributed to the formation of a p-n junction and a native oxide layer at the organic/inorganic interface.
Article
Materials Science, Multidisciplinary
S. R. Ellis, N. C. Bartelt, F. Leonard, K. C. Celio, E. J. Fuller, D. R. Hughart, D. Garland, M. J. Marinella, J. R. Michael, D. W. Chandler, B. Liao, A. A. Talin
Summary: Understanding and controlling the interaction of charge carriers with defects at buried insulator/semiconductor interfaces is crucial for optimal performance in electronics. This study used scanning ultrafast electron microscopy (SUEM) to investigate the dynamics of excited carriers at a Si surface buried under a thick oxide layer, revealing a previously unidentified contrast mechanism. Analysis of the contrast as a function of time and laser fluence demonstrated diffusion-mediated capture of excited carriers by interfacial traps.
Article
Physics, Applied
K. Kudo, M. Yamada, S. Honda, Y. Wagatsuma, S. Yamada, K. Sawano, K. Hamaya
Summary: The study reports the highest two-terminal magnetoresistance (MR) ratio at room temperature in semiconductor-based lateral spin-valve devices, achieved by demonstrating energetically stable CMS epilayers on Ge(111) through low-temperature molecular beam epitaxy. High MR ratios were achieved in lateral spin-valve devices with CMS/Fe/Ge Schottky tunnel contacts annealed at 200 degrees C.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
J. Perriere, M. Nistor, E. Millon, C. Cachoncinlle, C. Hebert, N. Jedrecy
Summary: This study investigates the varied electric and magneto-transport properties of epitaxial Nd-doped ZnO thin films grown on (100) MgO single crystal substrate under different growth temperatures. The structural changes are accompanied by significant modifications in charge transport mechanisms, leading to transitions from metallic behavior to semiconductor characteristics. The incorporation of Nd3+ ions during growth affects the scattering centers for electrons, influencing the overall conductivity of the films.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Physical
Osung Kwon, Yoon Kim, Myounggon Kang, Sungjun Kim
Summary: The study analyzed Cu/SiN/SiO2/Si devices with different dopant concentrations to be used in neuromorphic systems, revealing distinct resistive switching behavior under various operating conditions. Among them, the Cu/SiN/SiO2/p(+)-Si device showed more suitable characteristics for synaptic applications.
APPLIED SURFACE SCIENCE
(2021)
Article
Nanoscience & Nanotechnology
Ziling Zhang, Junhao Ma, Yu Deng, Yuan Ren, Wenhe Xie, Yonghui Deng, Yidong Zou, Wei Luo
Summary: In this study, a simple polymerization-induced aggregation strategy was proposed to synthesize uniform Si-doped mesoporous WO3 (Si-mWO3) microspheres with tunable sizes. Pd-decorated Si-mWO3 microspheres demonstrated excellent selectivity and sensitivity to H2 due to the oxygen spillover effect of Pd nanoparticles. The gas sensor based on Pd/Si-mWO3 microspheres exhibited a sensitivity 30 times higher than that of the pure Si-mWO3 sensor and a low operating temperature of 210 degrees C, suggesting its potential for intelligent H2 sensing with real-time monitoring.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Zichen Zhang, Matthias Passlack, Gregory Pitner, Cheng-Hsuan Kuo, Scott T. Ueda, James Huang, Harshil Kashyap, Victor Wang, Jacob Spiegelman, Kai-Tak Lam, Yu-Chia Liang, San Lin Liew, Chen-Feng Hsu, Andrew C. Kummel, Prabhakar Bandaru
Summary: A low-temperature AlOx process was used to deposit high nucleation density oxide layers on carbon materials, enabling the growth of sub-nanometer gate oxides. Electrical measurements and simulations demonstrated the feasibility of using this low-temperature AlOx process for gate oxides on carbon nanotubes, showing potential for carbon-based electronic device applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Applied
Xinyuan Dong, Diyuan Zheng, Jing Lu, Yiru Niu, Binbin Liu, Hui Wang
Summary: By utilizing surface plasmon-based techniques, researchers have successfully prepared Ag-ZnO core-shell nanoparticles with enhanced lateral photovoltaic effect. This system exhibits excellent LPE performance with a maximum sensitivity of 122.1 mV/mm, significantly outperforming conventional Ag/Si (5.03 mV/mm) and ZnO/Si (76.13 mV/mm) systems.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Yuhong Cao, Zhuyikang Zhao, Peng Bao, Zhikai Gan, Hui Wang
Summary: The transient composite structure of silk protein combined with silver nanoparticles exhibits excellent photovoltaic properties and potential biocompatibility, suggesting a promising alternative for the future development of biomaterial-related transient photovoltaic devices.
PHYSICAL REVIEW APPLIED
(2021)
Article
Physics, Applied
Shuai Liu, Xinyuan Dong, Yiru Niu, Diyuan Zheng, Zhikai Gan, Hui Wang
Summary: This study reveals an enhanced light-induced resistance effect in the structure of Ag/graphene/n-type Si, demonstrating significant linear resistance change and high sensitivity. By optimizing the thickness of the Ag film, the resistance change ratio can reach 472%, much higher than the control sample. The diffusion and recombination of photocarriers at the heterojunction interface play a crucial role in the enhancement of the effect.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Ke Chang, Xinna Yu, Binbin Liu, Yiru Niu, Renzhi Wang, Peng Bao, Gaoqi Hu, Hui Wang
Summary: The use of MoS2 quantum dots to modify inert electrodes can significantly reduce randomness in transient memristors, improving cycling endurance. Additionally, a percolation model of conductive filaments was proposed to reveal the relationship between electrode morphology and switching characteristics.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Yiru Niu, Kang'an Jiang, Xinyuan Dong, Diyuan Zheng, Binbin Liu, Hui Wang
Summary: In this study, iron oxide-based resistive random access memory (RRAM) with a simple structure demonstrated ultra-low set and reset voltage, high resistance ratio, excellent cycling endurance, and retention time. Major parameters showed about an order of magnitude improvement compared to previous data, indicating outstanding stable low power consumption quality. These findings suggest significant potential for the application of Fe2O3 memristor and provide a new idea for high-performance low-power RRAM realization.
Article
Optics
Shuai Liu, Anhua Dong, Xinyuan Dong, Yiru Niu, Diyuan Zheng, Hui Wang
Summary: Complex oxide perovskites, with SrTiO3 as an iconic material, exhibit novel physical phenomena and have gained popularity in electronic devices. The enhancement of lateral photovoltaic effect sensitivity by SrTiO3 nano-film offers an effective way to improve oxide-based photodetection devices.
Article
Physics, Applied
Yiru Niu, Xinna Yu, Xinyuan Dong, Diyuan Zheng, Shuai Liu, Zhikai Gan, Ke Chang, Binbin Liu, Kang'an Jiang, Yizhen Li, Hui Wang
Summary: By controlling the formation and fracture of conductive filaments at the interface, adding a SiO2/MoS2 QD hybrid structure can transform the reset mode of RRAM from progressive to abrupt, significantly improving the switching window and performance.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Xinyuan Dong, Diyuan Zheng, Jing Lu, Yiru Niu, Hui Wang
Summary: The study demonstrates selectively enhanced violet and near-infrared effects in ZnO/Si homo-heterostructure, with sensitivity controlled by manipulating annealing temperature. The increase in optical response time of the annealed sample by about 25 times is attributed to defect ionization in the ZnO layer and resistivity change after annealing.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Physical
Diyuan Zheng, Xinyuan Dong, Jing Lu, Yiru Niu, Hui Wang
Summary: WS2, a typical TMDs with strong light-matter interaction, shows great potential for highly-responsive photoelectric detectors. The WS2 nano-films prepared by ALD exhibit a high-performance lateral photovoltaic effect with high position sensitivity and ultrafast response speed, while the absorption wavelength of lateral photovoltage changes significantly as the thickness of WS2 decreases, indicating a correlation between materials bandgap and LPV.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Diyuan Zheng, Xinyuan Dong, Jing Lu, Yiru Niu, Hui Wang
Summary: By using P(VDF-CTFE) as a ferroelectric gate, the sensitivity and infrared detection performance of WS2/Si junctions have been successfully improved, allowing for broadening of the absorption wavelength range and enhancing the sensitivity of lateral photovoltaic effect. The significant improvement in response speed is attributed to the increase in carrier initial kinetic energy, providing a new approach for high-sensitivity, ultrafast, and stable infrared photodetection.
Article
Nanoscience & Nanotechnology
Ke Chang, Anhua Dong, Xinna Yu, Binbin Liu, Xinhui Zhao, Renzhi Wang, Zhikai Gan, Kang'an Jiang, Yiru Niu, Xinyuan Dong, Diyuan Zheng, Yizhen Li, Peng Bao, Zhuyikang Zhao, Hui Wang
Summary: By utilizing Ag-doped fibroin film as a switching medium, a high-performance transient memristor with self-assembled Ag nanoclusters model is designed and fabricated, showing novel electron-transport properties. The device can operate at ultralow voltages and has an extremely high memory window, opening up a new pathway for designing high-performance transient memristors for a safe and reliable data storage system.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Physics, Applied
Yizhen Li, Xinhui Zhao, Ke Chang, Yiru Niu, Xinna Yu, Hui Wang
Summary: This study improved the resistive switching behavior of a memory device by adding MoS2 quantum dots between the W bottom electrode and ZnO insulator. The modified device showed better switching properties and was successfully transferred onto a polyvinyl alcohol substrate, making it fully degradable.
PHYSICAL REVIEW APPLIED
(2022)
Article
Optics
Yuhong Cao, Kang'an Jiang, Zhuyikang Zhao, Hui Wang
Summary: Optoelectronic memory is a promising strategy for emulating the human visual system, but current devices lack the ability to store visual information. In this study, we discovered a light-induced trapping effect that allows for long-term storage of optical signals in a molybdenum disulfide quantum dot memory structure. The trapping capability can be significantly enhanced through laser irradiation, showcasing the potential of this approach for artificial intelligence devices.
Article
Physics, Applied
Renzhi Wang, Ke Chang, Xinhui Zhao, Xinna Yu, Saiqun Ma, Zhuyikang Zhao, Hui Wang
Summary: This study investigates the impact of device kinetic parameters on the stability of resistive switching behavior and proposes a high-performance RRAM with a Pt-Ag/Ta2O5/GQDs/Pt structure. Quantum dots can regulate the direction of Ag ion migration, while the Pt-Ag composite electrode can manipulate the oxidation rate of Ag atoms. Compared to the Ag/Ta2O5/GQDs/Pt device, the Pt-Ag/Ta2O5/GQDs/Pt device exhibits significantly improved performance.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Ke Chang, Xinhui Zhao, Xinna Yu, Zhikai Gan, Renzhi Wang, Anhua Dong, Zhuyikang Zhao, Yafei Zhang, Hui Wang
Summary: In this work, a light-triggered nonvolatile resistive switching behavior in oxygen-doped MoS2 is demonstrated. The two-terminal devices exhibit stable light-modulated resistive switching characteristics and optically tunable synaptic properties with an on/off ratio of up to 104. The integrated device with crossbar architecture enables simultaneous image sensing, preprocessing, and storage, thereby increasing the training efficiency and recognition rate of image recognition tasks. This work presents a novel pathway to develop the next generation of light-controlled memory and artificial vision systems for neuromorphic computing.