期刊
NEW JOURNAL OF CHEMISTRY
卷 37, 期 6, 页码 1720-1727出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3nj00050h
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资金
- NSFC
- State Basic Program
- Chinese Academy of Sciences
Among the reported organic n-type semiconductors, naphthalene diimide (NDI) derivatives have received increasing attention. In this paper, we report four non-symmetric core-expanded NDI derivatives 1-4. Electrochemical, absorption spectral and theoretical calculation studies show that LUMO energies of 1-4 are lower than that of parent NDI without substitution. OFET devices based on thin films of 1-4 which can be easily solution-processed are fabricated with conventional techniques and they show n-type semiconducting behaviours. Moreover, the performance of OFET devices of 1-4 can be significantly improved by annealing their thin films. OFETs of 3 exhibit electron mobility up to 0.17 cm(2) V-1 s(-1) with high on/off ratio (under ambient conditions) after annealing.
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