期刊
SMALL
卷 11, 期 40, 页码 5402-5408出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201501909
关键词
electroluminescence; light-emitting diodes; LEDs; molecular beam epitaxy; nanowires; quantum efficiency
类别
资金
- Army Research Office [W911NF-13-1-0329]
- National Science Foundation CAREER award [DMR-1055164]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1055164] Funding Source: National Science Foundation
Bottom-up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light-emitting diodes (LEDs), lasers, solar cells, and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial devices, which limits the manufacturability of nanowire devices. Here, nanowire LEDs directly grown and electrically integrated on metal are demonstrated. Optical and structural measurements reveal high-quality, vertically aligned GaN nanowires on molybdenum and titanium films. Transmission electron microscopy confirms the composition variation in the polarization-graded AlGaN nanowire LEDs. Blue to green electroluminescence is observed from InGaN quantum well active regions, while GaN active regions exhibit ultraviolet emission. These results demonstrate a pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets.
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