Article
Automation & Control Systems
Chengzi Yang, Yunqing Pei, Laili Wang, Longyang Yu, Fan Zhang, Huaqing Li, Jilong Liu, Mengyu Zhu
Summary: Wide bandgap semiconductors such as silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) offer good switching speed and withstand voltage, leading to new requirements for high bandwidth voltage measurement. The proposed voltage sensing circuit and proactive parameter design compensation network aim to meet these requirements by utilizing the characteristics of resistors and parasitic capacitance. By combining these technologies, the voltage probes can achieve higher withstand voltage ratings and better performance in measuring high-speed switching voltage.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Yu Zhang, Hui Li, Fang Z. Peng
Summary: This letter presents a low-loss and compact active reflected wave canceller (ARWC) to suppress the overvoltage at the motor terminal, which becomes worse with the application of SiC devices due to the significantly higher dv/dt values. The proposed ARWC circuit uses low current devices to break the rising and falling edges of the pulsewidth modulation voltage waveforms to two steps, whereas the second step cancels the first step reflection. Additionally, the ARWC circuit does not require an additional dc power supply, making it self-sustained.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Chemistry, Multidisciplinary
Jianghui Zheng, Weiyuan Duan, Yuzhen Guo, Zijun C. Zhao, Haimang Yi, Fa-Jun Ma, Laura Granados Caro, Chuqi Yi, Jueming Bing, Shi Tang, Jiangtao Qu, Kean Chern Fong, Xin Cui, Yan Zhu, Limei Yang, Andreas Lambertz, Md Arafat Mahmud, Hongjun Chen, Chwenhaw Liao, Guoliang Wang, Marko Jankovec, Cheng Xu, Ashraf Uddin, Julie M. Cairney, Stephen Bremner, Shujuan Huang, Kaining Ding, David R. McKenzie, Anita W. Y. Ho-Baillie
Summary: This article reports an elegant method to integrate perovskites and Si-heterojunction tandem solar cells using an ultra-thin indium tin oxide (ITO) interlayer, which overcomes the efficiency limit of single junction solar cells. It is found that a 1.7 nm ITO interlayer provides efficient interfacing between the silicon and perovskite subcells. Thinner ITO interlayers result in discontinuous films, while thicker ITO interlayers are less effective in localizing shunts.
ENERGY & ENVIRONMENTAL SCIENCE
(2023)
Article
Automation & Control Systems
Yudi Xiao, Martijn Sebastiaan Duraij, Zhe Zhang, Tiberiu-Gabriel Zsurzsan, Michael A. E. Andersen
Summary: The three-level neutral-point-clamped (TLNPC) dc-dc converter is widely used for high input voltage applications due to its simplicity, high input voltage tolerance, and zero-voltage-switching (ZVS) operation. However, when using a recovery approach in a Silicon Carbide (SiC)-based TLNPC converter, the outer switches experience hard-switching due to the quasi-linear output capacitance of SiC mosfets. A modified design approach is introduced to ensure ZVS of all switches in a full-SiC TLNPC dc-dc converter. Experimental results from a 3 kW full-SiC TLNPC prototype validate the analysis, achieving ZVS in the output power range of 1.2-3 kW with a rated input voltage of 1.2 kV and output voltage of 600 V.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
(2023)
Article
Chemistry, Multidisciplinary
Zirun Li, Bo Chen, Shimin Shan, Yongmei Zhang
Summary: In this study, the effect of ferroelectric polarization on magnetic anisotropy in CoFe3N/BaTiO3 heterostructures was investigated using first-principles calculations. It was found that the magnetic anisotropy of CoFe3N can be regulated by the ferroelectric polarization of BaTiO3. The transition of magnetic anisotropy is attributed to the orbital hybridization of interfacial Fe/Co atoms with O atoms induced by the magnetoelectric effect.
Article
Materials Science, Multidisciplinary
Kenji Ikeda, Nobukiyo Kobayashi, Ken-Ichi Arai
Summary: In this study, the dielectric tensor of nanogranular films with high refractive index silicon nitride matrix was measured, and the effect of matrix and magnetic granules' refractive index on the dielectric tensor was analyzed. The results show that the high refractive index has a significant effect on the Faraday rotation angle.
OPTICAL MATERIALS EXPRESS
(2022)
Article
Engineering, Electrical & Electronic
Jose Orti Gonzalez, Olayiwola Alatise
Summary: This article presents a method for evaluating the implications of threshold voltage (VTH) drift from gate voltage stress in SiC MOSFETs, which uses Miller coupling to characterize the impact of bias temperature instability (BTI)-induced VTH shift. Unlike traditional BTI characterization methods, this approach considers the actual converter environment to study the implications of VTH shift, making it more relevant for applications engineers. Studies on temperature, recovery time, and stress polarity have been conducted on commercially available SiC MOSFETs.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2021)
Article
Chemistry, Physical
Umesh Kumar Sinha, Antarjami Sahoo, Prahallad Padhan
Summary: Strong anisotropy is observed in the magnetization and magnetoresistance (MR) of La0.7Sr0.3MnO3 (LSMO) films grown on (001) oriented Si using pulsed sputtering plasma. The anisotropy of LSMO films is comparable to or larger than that of other heterostructures. The observed anisotropy in MR and its switching field are attributed to the shape anisotropy and interfacial spin reordering, modulated by the charge transfer-induced interfacial exchange coupling strength.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Masahiro Kamada, Vanessa Gall, Jayanta Sarkar, Manohar Kumar, Antti Laitinen, Igor Gornyi, Pertti Hakonen
Summary: By measuring the magnetoresistance of suspended graphene in the Corbino geometry, we found strong relative magnetoresistance approaching 100% at high magnetic fields and weak temperature dependence at low temperatures. An increase in charge carrier density led to a decrease in relative magnetoresistance by half, and a shift in the position of the charge neutrality point was observed with increasing magnetic field. The gate dependence of the magnetoresistance allowed characterization of the role of scattering on different types of disorder and separation of bulk resistance from contact resistance, providing a more reliable method to extract bulk mobility.
Article
Computer Science, Information Systems
Erjun Wang, Xiaoli Tian, Jiang Lu, Xinhua Wang, Chengzhan Li, Yun Bai, Chengyue Yang, Yidan Tang, Xinyu Liu
Summary: In this study, a novel silicon carbide insulated gate bipolar transistor (IGBT) with a 4H-SiC/Si heterojunction in the buffer layer (HBL) is proposed to improve the turn-off characteristic. The simulation results show that the proposed HBL-IGBT achieves a reduction of 28.6% in turn-off time and 47.5% in turn-off loss compared to the conventional 4H-SiC IGBT. The heterojunction of the HBL-IGBT can be formed with the plasma-activated direct bonding technology, which is compatible with the conventional fabrication process.
Article
Physics, Applied
Rui Pang, Jianjun Tian, Chaoyang Kang, Longsheng Wang, Haiyang Gu, Mengna Shen, Limin She, Yeheng Song, Xiansheng Liu, Weifeng Zhang
Summary: This paper reports the transport properties of bulk Ta1.04Ru0.78Te4 single crystals. The samples exhibited metallic behavior with a resistivity upturn below approximately 8.6 K, which may be attributed to quantum correction effects. The weakly nonlinear Hall resistivity suggests a p-type and multiband feature, and the magnetoresistance and violation of Kohler's rule further indicate the presence of weak antilocalization in the Ta1.04Ru0.78Te4 single crystal. These findings provide insights into the quantum transport properties of Ta1.04Ru0.78Te4 single crystals for future device design.
APPLIED PHYSICS LETTERS
(2023)
Article
Multidisciplinary Sciences
Lihuan Sun, Louk Rademaker, Diego Mauro, Alessandro Scarfato, Arpad Pasztor, Ignacio Gutierrez-Lezama, Zhe Wang, Jose Martinez-Castro, Alberto F. Morpurgo, Christoph Renner
Summary: This study uses scanning tunneling microscopy to image backscattering in graphene/tungsten selenide heterostructures and quantitatively determine the strength of spin-orbit coupling (SOC). The results show that the strength of SOC is one order of magnitude larger than what theory predicted, but in agreement with previous transport experiments.
NATURE COMMUNICATIONS
(2023)
Article
Physics, Applied
Mohammad Wahidur Rahman, Hareesh Chandrasekar, Towhidur Razzak, Hyunsoo Lee, Siddharth Rajan
Summary: This study demonstrates hybrid GaN lateral Schottky barrier diodes with improved breakdown and resistance characteristics by utilizing high-permittivity materials, achieving higher average electric fields and lower turn-on voltages.
APPLIED PHYSICS LETTERS
(2021)
Article
Multidisciplinary Sciences
Pengjie Wang, Guo Yu, Yanyu Jia, Michael Onyszczak, F. Alexandre Cevallos, Shiming Lei, Sebastian Klemenz, Kenji Watanabe, Takashi Taniguchi, Robert J. Cava, Leslie M. Schoop, Sanfeng Wu
Summary: Experimental observation of Landau quantization in a two-dimensional insulator, WTe2, suggests the possible existence of fractionalized, charge-neutral fermions. Large quantum oscillations were found in the material's magnetoresistance using a detection scheme that avoids edge contributions.
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
