期刊
NANOTECHNOLOGY
卷 23, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/23/10/105202
关键词
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资金
- National Research Laboratory
- National Core Research Center of the Korean Ministry of Education, Science and Technology
- National Research Foundation of Korea [2008-0062153, 2007-0055761] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10(6)) and a long retention time (over 10(4) s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current-voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism.
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