p-n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO2 nanowires

p-n hetero-junction diode arrays were fabricated using specific direct techniques for the transfer of p-type single walled carbon nanotubes (SWCNTs) and aligned n-type SnO2 nanowires (NWs) onto a patterned substrate surface. Their electronic and optoelectronic properties were characterized. Perpendicular crossings of the p-and the n-channels with each other were confirmed by transfer characteristics with respect to the bottom gate. The resulting diode showed a good rectifying behavior with a rectification ratio of over 10(2) at +/- 5 V, where the equivalent circuit model of a serially connected diode and resistor was used for analysis of the electrical properties. Both the forward and the reverse currents were observed to increase with the application of a positive gate bias, indicating an n-type gate dependence. Under a forward bias, the dominant contribution of the SnO2 NW channel to the total resistance of the equivalent model is attributed to the n-type gate dependence since the resistance of the n-channel increased with a negative gate bias, resulting in the decrease of the forward current. Under a reverse bias, positive gate increased the concentration of valence electrons in the SWCNTs, enhancing direct tunneling to the conduction band of the SnO2 NWs. High sensitivity to UV irradiation under the reverse bias was also demonstrated with a photosensitivity over 10(2), suggesting potential applicability of the hetero-junction diodes in optoelectronic devices.