Article
Optics
Antonio Consoli, Niccolo Caselli, Cefe Lopez
Summary: The researchers present a cost-effective approach to creating electrically driven random lasers by modifying commercially available laser diodes.
Review
Chemistry, Multidisciplinary
Sergey Nikishin, Ayrton Bernussi, Sergey Karpov
Summary: This article reviews the major issues affecting the performance of deep-UV (DUV) laser diodes (LDs) and discusses different approaches to improve their performance. The effects of threading dislocations, limitations on heavy n- and p-doping in Al-rich AlGaN alloys, electron leakage, implementation of tunnel junctions, and non-uniform hole injection are discussed. The current status of n- and p-type doping and threading dislocation density reduction is emphasized. Promising technological and design approaches, such as high-temperature face-to-face annealing and distributed polarization doping, are also discussed. The growth capabilities of MOVPE and MBE techniques for fabricating DUV-LD structures are compared.
Article
Nanoscience & Nanotechnology
Mingyan Xue, Wenbo Peng, Xuefeng Tang, Yahui Cai, Fangpei Li, Yongning He
Summary: The performance of a photodetector consisting of micropyramid structured p-Si/n-ZnO NWs heterojunction is optimized using the pyro-phototronic effect, leading to a significant increase in photoresponsivity. Furthermore, the introduction of chopper frequency and a thin film Al layer as the back electrode further improve the photocurrent and photoresponsivity. The coupling between the pyrophototronic effect and the piezo-phototronic effect is analyzed, showing a decrease in photoresponsivity and photocurrent under compressive strain.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Mingming Jiang, Peng Wan, Kai Tang, Maosheng Liu, Caixia Kan
Summary: The experimental results demonstrate a semiconductor polariton device utilizing low-dimensional semiconductors, showing strong exciton-polariton coupling effects and electrically driven laser features. This not only contributes to the development of low-threshold coherent light sources via the exciton-polariton effect, but also expands the fabrication of near-infrared microlaser devices.
Article
Materials Science, Multidisciplinary
Jun Tatebayashi, Kazuto Nishimura, Shuhei Ichikawa, Shinya Yamada, Yoshikata Nakajima, Kazuhisa Sato, Kohei Hamaya, Yasufumi Fujiwara
Summary: This study demonstrates a heterojunction p-GaN/n-ZnO LED structure using Eu-doped ZnO as an active component, aiming to realize low-cost and environmentally-friendly red LEDs with sharp linewidth and temperature stability. An Al2O3 electron blocking layer is inserted between p-GaN and ZnO:Eu/n-ZnO to facilitate carrier injection into the ZnO:Eu active layer. The device characteristics of the LED structures show red luminescence under current injection with reversed bias voltage, originating from Eu3+ ions in the ZnO host. Detailed optical characteristics of the ZnO:Eu layer enable the identification of luminescence centers contributing to Eu luminescence under indirect excitation and collisional excitation, paving the way for understanding the Eu luminescence mechanism in ZnO:Eu and realizing high-brightness LED structures based on rare-Earth doped ZnO.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Bryan Melanson, Matthew Hartensveld, Cheng Liu, Jing Zhang
Summary: In this study, electrically driven deep-ultraviolet (DUV) AlGaN micropillar array light emitting diodes (LEDs) were successfully fabricated using top-down approach, showing high output power density. The ordered micropillar arrays with inverse-taper profile were achieved through wet etching and dry etching, leading to stable electroluminescence and competitive output power density in DUV LEDs.
Article
Materials Science, Multidisciplinary
Qihua Zhang, Heemal Parimoo, Eli Martel, Xue Yin, Songrui Zhao
Summary: This study presents the first report on the fabrication of AlGaN deep UV LEDs on Si using polarization enhanced p-AlGaN epilayers. Compared to devices using standard p-AlGaN epilayer, the use of polarization enhanced epilayers reduces the series resistance of the devices, enabling uniform current injection at 278 nm.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Chemistry, Physical
Fawad Tariq, Ameer Abdullah, Mandar A. Kulkarni, Hamza Thaalbi, Jun-Seok-Ha, June Key Lee, Sang-Wan Ryu
Summary: GaN nanowires are promising photoelectrode materials due to their direct bandgap and high-efficiency photon absorption. However, their practical application is limited by poor stability and low conversion efficiency, which can be improved by loading a passivation layer and cocatalyst.
JOURNAL OF ALLOYS AND COMPOUNDS
(2024)
Article
Materials Science, Multidisciplinary
D. Esra Yildiz, Adem Kocyigit, Murat Yildirim
Summary: The importance of photodetectors has increased due to their potential in automation systems and optical communications. In this study, Al/TiO2/p-Si and Al/ZnO/p-Si Schottky-type photodetectors were fabricated and their photodetection properties were compared. The Al/ZnO/p-Si photodetector showed better detection performance at a wavelength of 550 nm.
Article
Multidisciplinary Sciences
Junpeng Ji, Igor F. Perepichka, Junwu Bai, Dan Hu, Xiuru Xu, Ming Liu, Tao Wang, Changbin Zhao, Hong Meng, Wei Huang
Summary: Power supply networks around the world rely heavily on three-phase electrical systems, but many electrically driven devices now use direct current or single-phase alternating current, making it more complex to utilize three-phase power. This study introduces a novel concept of driving light-emitting components with three-phase electric power, enabling pixel units, interactive displays, and driving organic light-emitting devices with RGB pixels.
NATURE COMMUNICATIONS
(2021)
Article
Engineering, Electrical & Electronic
Jing Liu, Yuanze Xu, Futing Yi
Summary: In this study, ZnO nanowires/TiO2 nanowires/Si micropillars structures were successfully fabricated on the surface of silicon micropillars, and applied to gas sensors. The structure showed an increased response to ethanol compared to the ZnO nanowires/Si micropillars structure.
SENSORS AND ACTUATORS A-PHYSICAL
(2022)
Article
Chemistry, Physical
Mahboobeh Nazarian-Samani, Masoud Nazarian-Samani, Safa Haghighat-Shishavan, Kwang-Bum Kim
Summary: In this study, a general predelithiation approach was implemented for the first time to fully exploit the advantages of ternary Si,P-simultaneously-rich M-Si-P anodes for an ultrastable NIB performance. The predelithiation generated a thin F-rich inorganic solid-electrolyte interphase (SEI) film and additional stable organic/inorganic SEI compounds, which prevented the aggregation and coarsening of transition metals and tolerated severe volume changes.
ENERGY STORAGE MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Lucas Gueniat, Nicolas Tappy, Akshay Balgarkashi, Titouan Charvin, Raphael Lemerle, Nicholas Morgan, Didem Dede, Wonjong Kim, Valerio Piazza, Jean-Baptiste Leran, Luiz H. G. Tizei, Mathieu Kociak, Anna Fontcuberta i Morral
Summary: This article introduces the potential of vertical nanospades (NSPDs) III-V nanostructures grown on Si(100) in optoelectronic applications. Using hyperspectral imaging, researchers are able to study the luminescence properties of the nanospades with high spatial resolution and observe a symmetric spatial luminescence splitting phenomenon. These findings open up new possibilities for dual wavelength light-emitting diode structures and demonstrate the prospects of integrating optically active III-V structures on the Si(100) platform.
ACS APPLIED NANO MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
E. Zielony, M. A. Pietrzyk
Summary: This paper focuses on fundamental studies of ZnO/ZnMgO nanowire p-n junctions grown by MBE on Si substrate for UV light emitting sources. The investigation of defects responsible for optical emission from the nanowires was emphasized, and electro-optical properties of the diodes were studied through PL and DLTS. Fabrication of n-ZnMgO/p-Si p-n junctions and verification of their quality through electrical measurements were also conducted. PL experiments revealed excitonic transitions and a deep-level emission peak, with the depletion region located on the n-type side of the p-n junction according to C-V results. DLTS measurements identified electron traps related to ZnO, with parameters such as activation energies and capture cross sections determined.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2021)
Article
Chemistry, Physical
Zhijie Zhou, Ye Tian, Yongbo Zhou, Shangfei Yao, Wenchao Lin, Wenhong Sun, Hao Huang, Lishuang Wang, Li Chen, Bingsuo Zou
Summary: In this paper, a ZnO:Ga microwire/p-type gallium nitride hetero-junction light-emitting diode was fabricated and lasing emission was observed near the silver electrode. The lasing was interpreted as trap-state FP-mode lasing. By sputtering gold on the surface of the ZnO:Ga microwire, the device's luminescence was enhanced and anomalous spectral signals appeared at a reverse current of 20 mA. The luminescence enhancement was attributed to hot electron transfer induced by plasmons and the strange spectral phenomenon was caused by Fano resonance due to plasmon-microcavity coupling.
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
