Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures

8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology

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Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Nanosecond switching in GeTe phase change memory cells

(2009) G. Bruns et al.   APPLIED PHYSICS LETTERS

Fast phase transitions induced by picosecond electrical pulses on phase change memory cells

(2008) W. J. Wang et al.   APPLIED PHYSICS LETTERS

Role of Ge Switch in Phase Transition: Approach using Atomically Controlled GeTe/Sb2Te3Superlattice

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Crystallization properties of ultrathin phase change films

(2008) Simone Raoux et al.   JOURNAL OF APPLIED PHYSICS

Size-Dependent Surface-Induced Heterogeneous Nucleation Driven Phase-Change in Ge2Sb2Te5Nanowires

(2008) Se-Ho Lee et al.   NANO LETTERS