期刊
NANOTECHNOLOGY
卷 21, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/21/6/065305
关键词
-
资金
- Materials Innovation Institute (M2i) [MC3.05243]
- Netherlands Institute of Metals Research
- FP6 NODE [015783]
- Ministry of Economic Affairs in the Netherlands (NanoNed)
- Nederlandse organisatie voor Wetenschappelijk Onderzoek (NWO)
A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 degrees C for InP and 700 degrees C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据