Article
Chemistry, Physical
Xiao-Lin Wang, Han-Lin Zhao, Gergely Tarsoly, Hang Zhu, Jae-Yun Lee, Sung-Jin Kim
Summary: In this study, the effect of focused oxygen plasma treatment on solution processed indium oxide films was investigated. The results showed that controlling the plasma flow rate can be used to finetune the device characteristics and selecting the optimal flow rate is important for improving the performance of the devices. In2O3 TFTs treated at 6 sccm showed the best performance.
APPLIED SURFACE SCIENCE
(2024)
Article
Nanoscience & Nanotechnology
Fabian Schoeppach, Daniel Splith, Holger von Wenckstern, Marius Grundmann
Summary: In this study, metal-semiconductor field-effect transistor (MESFET) devices based on pulsed laser deposition (PLD) grown In2O3 thin films are reported. These devices exhibit on-off ratios exceeding 6 orders of magnitude and low sub-threshold swing values close to the thermodynamic limit. Oxygen plasma treatment and compensation doping with Mg are used to suppress the accumulation of electrons at the surface of In2O3, which is a major obstacle for its use as an active material in electronic devices.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Toxicology
Nan Liu, Yi Guan, Yan Yu, Gai Li, Ling Xue, Weikang Li, Xiaoyu Qu, Ning Li, Sanqiao Yao
Summary: This study investigates the links between occupational indium exposure and lung injury and explores the mechanism of action. The findings indicate elevated levels of serum and urine indium in exposed workers, as well as lung damage, oxidative stress, and inflammation. Animal experiments also confirm the harmful effects of indium on the lungs. A potential biomarker of exposure and effect in exposed workers, serum SP-A levels, is identified.
PARTICLE AND FIBRE TOXICOLOGY
(2022)
Article
Polymer Science
Ki-Woong Park, Won-Ju Cho
Summary: A random network of indium-gallium-zinc oxide (IGZO) nanowires was fabricated using electrospun-PVP-nanofiber template transfer. Compared to electrospun IGZO nanofibers, the nanofiber template-transferred IGZO nanowires demonstrated higher transmittance, stronger substrate adhesion, superior electrical performance, and operational reliability and uniformity. The proposed IGZO nanowires fabricated by PVP nanofiber template transfer are expected to overcome the limitations of conventional electrospun IGZO nanofibers.
Article
Materials Science, Coatings & Films
Chih-Chieh Hsu, Po-Tsun Liu, Kai-Jhih Gan, Dun-Bao Ruan, Yu-Chuan Chiu, Simon M. Sze
Summary: The O-2 plasma treatment improves the quality and uniformity of the IWZO CBRAM device, resulting in better set and reset voltages for memory operation, as well as excellent memory performance with high endurance cycles and long retention time.
SURFACE & COATINGS TECHNOLOGY
(2021)
Article
Chemistry, Physical
Yeonghwan Ahn, Yerin Jeon, Seokwon Lim, Jiwoong Kim, Jisu Kim, Le Thai Duy, Hyungtak Seo
Summary: This study introduces the use of plasma-enhanced atomic layer deposition (PEALD) for growing ultrathin Zr-doped hafnium oxide (HfO2-ZrO2 or HZO) nanolaminates and explores the effect of radio frequency (RF) plasma power on the electrical properties of these oxide films. The results show the notable influence of plasma power on the growth and properties of ferroelectric oxide films, with increased power leading to a decrease in film polarization. Additionally, a relationship between leakage current and the electronic structure causing film polarization is revealed.
SURFACES AND INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Zhi-Yue Li, Shu-Mei Song, Wan-Xia Wang, Jian-Hong Gong, Yang Tong, Ming-Jiang Dai, Song-Sheng Lin, Tian-Lin Yang, Hui Sun
Summary: In this study, homojunction thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (a-IGZO) as active channel layers were fabricated by RF magnetron sputtering. The effect of oxygen partial pressure on the properties of IGZO thin films was investigated. It was found that the resistivity of IGZO thin films increases with higher oxygen partial pressure. Optimal electrical characteristics were observed in homojunction IGZO TFTs with an oxygen partial pressure of 1.96%.
Article
Materials Science, Ceramics
Kang-Hwan Bae, Seung-Hyun Lim, Kie Yatsu, Ick-Joon Park, Hyuck-In Kwon
Summary: This study investigated the physical and chemical properties of H2 plasma-treated tin oxide thin films and their applications in ambipolar thin-film transistors. The results showed that H2 plasma treatments induced changes in the chemical structures and surface morphologies of the thin films, improving their ambipolarity and electrical performance.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Physical
Zefei Peng, Wei Shi, Song Chen, Hang Shi, Xueling Yan, Zelin Liu, Linfeng Lan, Miao Xu, Min Li, Lan Liu
Summary: In this study, the illumination instability of one-dimensional metal oxide nanofibers (MO-NFs) based field effect transistors (FETs) was effectively addressed by doping praseodymium (Pr), leading to enhanced illumination stability and excellent electrical performance of the FETs.
SURFACES AND INTERFACES
(2022)
Article
Chemistry, Physical
Wengao Pan, Yunping Wang, Yanxin Wang, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Xinwei Wang, Shengdong Zhang, Lei Lu
Summary: In this work, the multiple effects of hydrogen (H) doping on amorphous InGaZnO (IGZO) TFTs were investigated. The H content influenced the electrical performances of the TFTs, acting as a defect suppressor, donor defect, transition state, and finally an acceptor defect. The oxygen vacancy (Vo) in IGZO determined the diffusion channel of the H dopant and its concentration. Additionally, fluorine (F) doping improved the hydrogen resistibility of IGZO.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Physics, Applied
Kouji Suemori, Nobuki Ibaraki, Toshihide Kamata
Summary: The internal stress of metal oxides causes damage to hybrid organic/metal-oxide devices, but controlling this stress by introducing a gas affecting crystal growth during deposition can prevent damage and demonstrate high-performance devices. High-performance organic/metal-oxide hybrids without damage may open up new possibilities in electronics.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Alexey A. Noyan, Yevgeniy A. Ovchenkov, Valery V. Ryazanov, Igor A. Golovchanskiy, Vasily S. Stolyarov, Eduard E. Levin, Kirill S. Napolskii
Summary: This study investigates the magnetic and superconducting properties of arrays of superconducting nanowires of different diameters and finds that the magnetic field configurations and critical fields vary with the diameter.
Article
Materials Science, Multidisciplinary
Zhi-Xuan Zhang, Ming-Jie Zhao, Wan-Yu Wu, Dong-Sing Wuu, Peng Gao, Shui-Yang Lien, Wen-Zhang Zhu
Summary: As the dimensions of electron devices are scaling down, there is an increasing demand for high-quality thin film on high-aspect-ratio substrate. Atomic layer deposition (ALD) provides a solution for conformal thin film deposition. In this work, indium oxide (In2O3) thin film with high electron mobility and wide band gap was prepared by ALD. O2 plasma was used to enhance the growth rate, and the film properties and deposition mechanisms under different plasma power were investigated. A two-regime property dependence on plasma power was observed and explained by a two-reaction-mode mechanism. Higher plasma power was found to be beneficial for enhancing the film growth rate and properties.
Article
Chemistry, Multidisciplinary
Xinming Zhuang, Zixu Sa, Jie Zhang, Mingxu Wang, Mingsheng Xu, Fengjing Liu, Kepeng Song, Tao He, Feng Chen, Zai-xing Yang
Summary: High-performance GaSb nanowire field-effect transistors (FETs) with excellent bias-stress stability and synaptic behaviors are achieved by utilizing native GaOx shells through in-situ thermal annealing. The native oxide shell provides enhanced stability and charge retention capability for synaptic behaviors.
Article
Materials Science, Coatings & Films
Su-Hwan Choi, Hyun-Jun Jeong, TaeHyun Hong, Yong Hwan Na, Chi Kwon Park, Myung Yong Lim, Seong Hoon Jeong, Jun Hyung Lim, Jin-Seong Park
Summary: Plasma-enhanced atomic layer deposited indium oxide (InOx) films using a new liquid precursor DATI exhibit high growth efficiency and purity, making them a promising choice for indium oxide semiconductors, particularly in backplane TFTs.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Physics, Applied
Suprem R. Das, Jiseok Kwon, Abhijith Prakash, Collin J. Delker, Saptarshi Das, David B. Janes
APPLIED PHYSICS LETTERS
(2015)
Article
Chemistry, Physical
Timothy N. Lambert, Julian A. Vigil, Suzanne E. White, Collin J. Delker, Danae J. Davis, Maria Kelly, Michael T. Brumbach, Mark A. Rodriguez, Brian S. Swartzentruber
JOURNAL OF PHYSICAL CHEMISTRY C
(2017)
Article
Nanoscience & Nanotechnology
C. J. Delker, J. Y. Yoo, E. Bussmann, B. S. Swartzentruber, C. T. Harris
Article
Nanoscience & Nanotechnology
Julian A. Vigil, Timothy N. Lambert, Jonathon Duay, Collin J. Delker, Thomas E. Beechem, Brian S. Swartzentruber
ACS APPLIED MATERIALS & INTERFACES
(2018)
Article
Physics, Applied
Suprem R. Das, Collin J. Delker, Dmitri Zakharov, Yong P. Chen, Timothy D. Sands, David B. Janes
APPLIED PHYSICS LETTERS
(2011)
Article
Engineering, Electrical & Electronic
Collin J. Delker, Seongmin Kim, Mattias Borg, Lars-Erik Wernersson, David B. Janes
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2012)
Article
Engineering, Electrical & Electronic
Collin J. Delker, Yunlong Zi, Chen Yang, David B. Janes
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2013)
Article
Engineering, Electrical & Electronic
Collin J. Delker, Yunlong Zi, Chen Yang, David B. Janes
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2014)
Article
Chemistry, Multidisciplinary
Yanjie Zhao, Drew Candebat, Collin Delker, Yunlong Zi, David Janes, Joerg Appenzeller, Chen Yang
Article
Engineering, Electrical & Electronic
Collin J. Delker, Jinkyoung Yoo, Brian S. Swartzentruber, C. Thomas Harris
IEEE ELECTRON DEVICE LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Sarah R. Stevenson, Collin J. Delker, Christopher D. Nordquist, Otis M. Solomon, Raegan L. Johnson-Wilke, Mark H. Ballance, Ricky L. Sandoval, C. Thomas Harris
Summary: This study introduces a single broadband on-wafer resistance calibration standard with excellent stability and a wide frequency range, fabricated with a 15-nm-thick gold resistor on an alumina substrate. The proposed standard demonstrates less than 2 K of heating and less than 0.2-dB difference in resistance response across the measured frequency band. This work marks a significant step towards establishing traceability of resistance standards over a wide frequency range.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
(2021)