4.6 Article

Improved photoluminescence of vertically aligned ZnO nanorods grown on BaSrTiO3 by pulsed laser deposition

期刊

NANOTECHNOLOGY
卷 20, 期 38, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/38/385706

关键词

-

资金

  1. AFOSR [FA9550-07-1-0013]
  2. NSF [DMR0513968]
  3. DOE [DE-FG0207ER46389]
  4. AFRL [FA8650-06-D5401]
  5. Division Of Materials Research
  6. Direct For Mathematical & Physical Scien [0803276] Funding Source: National Science Foundation

向作者/读者索取更多资源

ZnO nanorods were grown on a variety of substrates such as Si, SiO2/Si and sapphire in a large-area pulsed laser deposition chamber designed for sensor device fabrication. Processing conditions were optimized to grow ZnO nanorods with or without seed layers. Au, Cr and BaSrTiO3 (BST) seed layers were investigated to compare their effects on the diameter and orientation of ZnO nanorods. ZnO nanorods were observed to align better when grown on sapphire, Cr or BST seed layers as compared to Au or Si layers. The highest quality nanorods were those grown on BST seed layers, as shown by 4 K photoluminescence donor-bound-exciton linewidths of only 0.5 meV.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Engineering, Electrical & Electronic

Recessed-Gate Enhancement-Mode beta-Ga2O3 MOSFETs

Kelson D. Chabak, Jonathan P. McCandless, Neil A. Moser, Andrew J. Green, Krishnamurthy Mahalingam, Antonio Crespo, Nolan Hendricks, Brandon M. Howe, Stephen E. Tetlak, Kevin Leedy, Robert C. Fitch, Daiki Wakimoto, Kohei Sasaki, Akito Kuramata, Gregg H. Jessen

IEEE ELECTRON DEVICE LETTERS (2018)

Article Engineering, Electrical & Electronic

Tuning the Phase and Microstructural Properties of TiO2 Films Through Pulsed Laser Deposition and Exploring Their Role as Buffer Layers for Conductive Films

S. Agarwal, M. S. Haseman, K. D. Leedy, D. J. Winarski, P. Saadatkia, E. Doyle, L. Zhang, T. Dang, V. S. Vasilyev, F. A. Selim

JOURNAL OF ELECTRONIC MATERIALS (2018)

Article Materials Science, Multidisciplinary

Tungsten-doped vanadium dioxide thin film based tunable antenna

Eunsung Shin, KuanChang Pan, Weisong Wang, Guru Subramanyam, Vladimir Vasilyev, Kevin Leedy, Tony Quach

MATERIALS RESEARCH BULLETIN (2018)

Article Nanoscience & Nanotechnology

Efficient broadband energy detection from the visible to near-infrared using a plasmon FET

Seongman Cho, Mark A. Ciappesoni, Monica S. Allen, Jeffery W. Allen, Kevin D. Leedy, Brett R. Wenner, Sung Jin Kim

NANOTECHNOLOGY (2018)

Article Materials Science, Multidisciplinary

Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics

Justin W. Cleary, Evan M. Smith, Kevin D. Leedy, Gordon Grzybowski, Junpeng Guo

OPTICAL MATERIALS EXPRESS (2018)

Article Nanoscience & Nanotechnology

Coupling of Epsilon-Near-Zero Mode to Gap Plasmon Mode for Flat-Top Wideband Perfect Light Absorption

Joshua R. Hendrickson, Shivashankar Vangala, Chandriker Dass, Ricky Gibson, John Goldsmith, Kevin Leedy, Dennis E. Walker, Justin W. Cleary, Wonkyu Kim, Junpeng Guo

ACS PHOTONICS (2018)

Editorial Material Nanoscience & Nanotechnology

Wide bandgap oxides

Kevin D. Leedy, Kookrin Char, Masataka Higashiwaki, Rebecca L. Peterson, James S. Speck

APL MATERIALS (2019)

Article Physics, Applied

Gated Hall and field-effect transport characterization of e-mode ZnO TFTs

J. Anders, M. Kazimierczuk, K. D. Leedy, N. Miller, T. Cooper, M. Streby, M. Schuette

APPLIED PHYSICS LETTERS (2020)

Article Physics, Applied

Electrical and optical properties of degenerate and semi-insulating ZnGa2O4: Electron/phonon scattering elucidated by quantum magnetoconductivity

David C. Look, Kevin D. Leedy, Ray-Hua Horng, Marco D. Santia, Stefan C. Badescu

APPLIED PHYSICS LETTERS (2020)

Article Engineering, Electrical & Electronic

Pulsed Power Performance of β-Ga2O3 MOSFETs at L-Band

Neil A. Moser, Tadj Asel, Kyle J. Liddy, Miles Lindquist, Nicholas C. Miller, Shin Mou, Adam Neal, Dennis E. Walker, Steve Tetlak, Kevin D. Leedy, Gregg H. Jessen, Andrew J. Green, Kelson D. Chabak

IEEE ELECTRON DEVICE LETTERS (2020)

Article Nanoscience & Nanotechnology

Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ=2323 S cm-1

Hyung Min Jeon, Kevin D. Leedy, David C. Look, Celesta S. Chang, David A. Muller, Stefan C. Badescu, Vladimir Vasilyev, Jeff L. Brown, Andrew J. Green, Kelson D. Chabak

Summary: This study successfully synthesized conductive Si-doped beta-Ga2O3 homoepitaxial films with high transparency and promising applications using pulsed laser deposition.

APL MATERIALS (2021)

Article Engineering, Electrical & Electronic

Ultra-Low Power Schottky Barrier TFT-Based Neurotransmitter Detection and Regenerative Studies

Abhijeet Barua, Ryan J. White, Kevin D. Leedy, Vidya Chidambaran, Rashmi Jha

Summary: Limited work has been done on the behavior of Schottky barrier field-effect transistors for neurotransmitter sensing applications. In this study, low-power deep subthreshold characteristics of thin film transistors made of InGaZnO4 were investigated for the sensitive and selective ex vivo detection of Dopamine. The devices showed promising detection metrics, including a low limit of detection, high binding affinity, and high sensitivity. Furthermore, the devices remained functional even after a regeneration test period, showcasing their potential for long-term use as biosensors.

IEEE SENSORS JOURNAL (2022)

Article Physics, Applied

Optical and electronic effects of rapid thermal annealing at Ir-Ga2O3 interfaces

Daram N. Ramdin, Micah S. Haseman, Hsien-Lien Huang, Kevin D. Leedy, Jinwoo Hwang, Leonard J. Brillson

Summary: Iridium is a common impurity in the edge-defined film-fed growth method for producing high-power Ga2O3 device structures, but its effects on carrier transport and recombination have not been fully explored. After nitrogen rapid thermal annealing, the optical and electronic nature of iridium in Ga2O3 and at Ir/Ga2O3 interfaces change on a near-nanometer to micrometer scale, influencing defect-assisted tunneling, diode rectification, and electric field strength preservation. Various measurement techniques reveal the diffusion and impact of iridium in crystal growth, providing insights for improving device performance.

JOURNAL OF APPLIED PHYSICS (2022)

Proceedings Paper Materials Science, Multidisciplinary

Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO

Jonathan P. McCandless, Kevin D. Leedy, Michael L. Schuette

OXIDE-BASED MATERIALS AND DEVICES IX (2018)

Proceedings Paper Materials Science, Multidisciplinary

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

Buguo Wang, Jason Anders, Kevin Leedy, Michael Schuette, David Look

OXIDE-BASED MATERIALS AND DEVICES IX (2018)

暂无数据