4.6 Article

Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices

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NANOTECHNOLOGY
卷 20, 期 11, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/11/115201

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  1. MEC [MAT 200601259]

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Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from beta-Ga2O3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga2O3/Eu2O3 powders was used as precursor material and annealed under an argon flow. In the other one, undoped beta-Ga2O3 nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu3+ intraionic transitions from beta-Ga2O3: Eu has been observed. Waveguiding of this red emitted light through the structures was shown.

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