期刊
NANOTECHNOLOGY
卷 20, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/20/8/085202
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资金
- Korea Science and Engineering Foundation (KOSEF)
- Korea government (MEST) [R0A-2007-000-20044-0]
- National Research Foundation of Korea [과C6A2602] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Transmission electron microscopy images showed that conjugation between single core-shell CdSe/ZnSe quantum dots (QDs) and oxidized multi-walled carbon nanotubes (MWCNTs) was achieved through the complexation reaction. Current-voltage (I-V) measurements on Al/CdSe: MWCNT conjugated nanocomposite/indium-tin-oxide devices at 300 K showed that the on/off ratio of the current bistability was as large as about 10(4), which was significantly increased due to an enhancement of the carrier transfer efficiency between the CdSe/ZnSe QDs and the MWCNTs. Carrier transport mechanisms of the bistable memory devices fabricated utilizing CdSe/ZnSe QD/MWCNT hybrid nanocomposite are described on the basis of the I-V results.
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