4.8 Article

Sn-doped bismuth telluride nanowires with high conductivity

期刊

NANOSCALE
卷 4, 期 20, 页码 6276-6278

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c2nr32172f

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资金

  1. NSF of China [21071033, 11034001]
  2. Program for New Century Excellent Talents in University [NCET-10-0357]
  3. Shanghai Pujiang Program [10PJ1401000]
  4. Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
  5. National Basic Research Program of China (973 Program) [2011CB921802]

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Bismuth telluride (Bi2Te3) nanowires with sub-100 nm diameters were synthesized by Au-Sn co-catalyzed chemical vapor deposition. These Bi2Te3 nanowires were single crystals with a hexagonal lattice. The Sn catalyst played a key role in achieving the one-dimensional nanowire structures, while the absence of Sn resulted in other morphologies such as nanoplates, nanooctahedrons and nanospheres. Raman spectra revealed that compared to the Bi2Te3 bulk materials, the Bi2Te3 nanowires displayed an A(1u) spectral peak, implying the breaking of symmetry. The temperature-dependent electrical measurement indicated that these Sn-doped Bi2Te3 nanowires were metallic, with a high conductivity of 1.6 x 10(5) S m(-1) at 300 K.

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