期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 212, 期 -, 页码 10-17出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2015.01.070
关键词
ZnO nanostructures; Sputtering; Raman scattering; Point defects; NH3 gas sensor
资金
- Fund for Improvement of Science and Technology Infrastructure in Universities and Higher Educational Institutes (FIST) and Nanomission [SR/NM/NS-77/2008]
- Council of Scientific and Industrial Research (CSIR), Govt. of India
In this report, the NH3 gas sensing properties of ZnO nanostructures fabricated by radio frequency magnetron sputtering under various argon sputtering pressures have been investigated under various temperatures. The morphological transitions occur from vertical standing nanorods to inclined and tapered nanostructures with increasing the argon sputtering pressure. The dominant green emission at around 2.28 eV in the photoluminescence spectra signifies the presence of oxygen vacancies in the ZnO nanostructures which increases as a function of argon sputtering pressure. Despite low surface area, the nanostructures grown under higher argon sputtering pressure of 10 Pa exhibit excellent NH3 gas response magnitude since it is exhibiting more oxygen vacancies as compared to other counterparts. For 25 ppm NH3 gas at room temperature, a response time of 49 s and a fast recovery time of 19s are attributed to the modification in the intermediate defect states induced by the oxygen vacancies through the adsorption and desorption of gas molecules on the surface of ZnO nanostructures. (C) 2015 Elsevier B.V. All rights reserved.
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