期刊
NANOSCALE
卷 2, 期 10, 页码 2069-2072出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c0nr00315h
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资金
- ESF
- EC [CP-FP-214107]
We present a novel additive process, which allows the spatially controlled integration of nanoparticles (NPs) inside silicon surfaces. The NPs are placed between a conductive stamp and a silicon surface; by applying a bias voltage a SiO2 layer grows underneath the stamp protrusions, thus embedding the particles. We report the successful nanoembedding of CoFe2O4 nanoparticles patterned in lines, grids and logic structures.
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