Comparison of the MOS capacitor hydrogen sensors with different SiO2 film thicknesses and a Ni-gate film in a 4% hydrogen–nitrogen mixture

出版年份 2015 全文链接

标题

作者

关键词

Hydrogen sensor, H, 2, –N, 2, mixture, Flat-band voltage, BTS technique, Response

出版物

Volume 216, Issue -, Pages 367-373

出版商

Elsevier BV

发表日期

2015-04-21

DOI

10.1016/j.snb.2015.04.039

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